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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2411.10698 |
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| _version_ | 1866913579231346688 |
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| author | Yu, Jia Zhou, Yuchen Wang, Xiao Ma, Xuejian Dodabalapur, Ananth Lai, Keji |
| author_facet | Yu, Jia Zhou, Yuchen Wang, Xiao Ma, Xuejian Dodabalapur, Ananth Lai, Keji |
| contents | The unique electronic properties of amorphous indium gallium zinc oxide (a-IGZO) thin films are closely associated with the complex charge dynamics of the materials. Conventional studies of charge transport in a-IGZO usually involve steady-state or transient measurements on field-effect transistors. Here, we employed microwave impedance microscopy to carry out position-dependent time-of-flight (TOF) experiments on a-IGZO devices, which offer spatial and temporal information of the underlying transport dynamics. The drift mobility calculated from the delay time between carrier injection and onset of TOF response is 2 - 3 cm2/Vs, consistent with the field-effect mobility from device measurements. The spatiotemporal conductivity data can be nicely fitted to a two-step function, corresponding to two coexisting mechanisms with a typical timescale of milliseconds. The competition between multiple-trap-and-release conduction through band-tail states and hopping conduction through deep trap states is evident from the fitting parameters. The underlying length scale and time scale of charge dynamics in a-IGZO are of fundamental importance for transparent and flexible nanoelectronics and optoelectronics, as well as emerging back-end-of-line applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_10698 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Probing Charge Dynamics in Amorphous Oxide Semiconductors by Time-of-flight Microwave Impedance Microscopy Yu, Jia Zhou, Yuchen Wang, Xiao Ma, Xuejian Dodabalapur, Ananth Lai, Keji Materials Science The unique electronic properties of amorphous indium gallium zinc oxide (a-IGZO) thin films are closely associated with the complex charge dynamics of the materials. Conventional studies of charge transport in a-IGZO usually involve steady-state or transient measurements on field-effect transistors. Here, we employed microwave impedance microscopy to carry out position-dependent time-of-flight (TOF) experiments on a-IGZO devices, which offer spatial and temporal information of the underlying transport dynamics. The drift mobility calculated from the delay time between carrier injection and onset of TOF response is 2 - 3 cm2/Vs, consistent with the field-effect mobility from device measurements. The spatiotemporal conductivity data can be nicely fitted to a two-step function, corresponding to two coexisting mechanisms with a typical timescale of milliseconds. The competition between multiple-trap-and-release conduction through band-tail states and hopping conduction through deep trap states is evident from the fitting parameters. The underlying length scale and time scale of charge dynamics in a-IGZO are of fundamental importance for transparent and flexible nanoelectronics and optoelectronics, as well as emerging back-end-of-line applications. |
| title | Probing Charge Dynamics in Amorphous Oxide Semiconductors by Time-of-flight Microwave Impedance Microscopy |
| topic | Materials Science |
| url | https://arxiv.org/abs/2411.10698 |