Hypocoercivity for the non-linear semiconductor Boltzmann equation

Fuente: arXiv
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Main Authors: Pirner, Marlies, Toshpulatov, Gayrat
Format: Preprint
Published: 2024
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author Pirner, Marlies
Toshpulatov, Gayrat
author_facet Pirner, Marlies
Toshpulatov, Gayrat
contents A kinetic model for semiconductor devices is considered on a flat torus. We prove exponential decay to equilibrium for this non-linear kinetic model by hypocoercivity estimates. This seems to be the first hypocoercivity result for this nonlinear kinetic equation for semiconductor devices without smallness assumptions. The analysis benefits from uniform bounds of the solution in terms of the equilibrium velocity distribution.
format Preprint
id arxiv_https___arxiv_org_abs_2411_11023
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Hypocoercivity for the non-linear semiconductor Boltzmann equation
Pirner, Marlies
Toshpulatov, Gayrat
Analysis of PDEs
35Q20, 35B40, 35Q81, 35Q82, 82C40
A kinetic model for semiconductor devices is considered on a flat torus. We prove exponential decay to equilibrium for this non-linear kinetic model by hypocoercivity estimates. This seems to be the first hypocoercivity result for this nonlinear kinetic equation for semiconductor devices without smallness assumptions. The analysis benefits from uniform bounds of the solution in terms of the equilibrium velocity distribution.
title Hypocoercivity for the non-linear semiconductor Boltzmann equation
topic Analysis of PDEs
35Q20, 35B40, 35Q81, 35Q82, 82C40
url https://arxiv.org/abs/2411.11023