Scaled tight binding model for a two dimensional electron gas at the (001) LaAlO$_3$/SrTiO$_3$ interface

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Wójcik, P., Citro, R., Szafran, B.
Format: Preprint
Published: 2024
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866913580004147200
author Wójcik, P.
Citro, R.
Szafran, B.
author_facet Wójcik, P.
Citro, R.
Szafran, B.
contents The progress in the fabrication of nanoscale systems based on the two-dimensional electron gas at the interface between LaAlO$_3$ and SrTiO$_3$ (LAO/STO) has created an increased demand for simulations of these nanostructures, which typically range in size from tens to hundreds of nanometers. Due to the low lattice constant of LAO/STO, approximately 0.394 nm, these calculations become extremely time-consuming. Here, we present a scaled tight-binding approximation defined on a mesh with size that can be several times larger than in the ordinary approach. The scaled model is analyzed within the context of quantum transport simulations and electronic structure calculations. Our findings demonstrate that the scaled model closely aligns with the ordinary one up to a scaling factor of 8. These results pave the way for more efficient simulations of LAO/STO nanostructures with realistic sizes relevant to experimental applications.
format Preprint
id arxiv_https___arxiv_org_abs_2411_11445
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Scaled tight binding model for a two dimensional electron gas at the (001) LaAlO$_3$/SrTiO$_3$ interface
Wójcik, P.
Citro, R.
Szafran, B.
Mesoscale and Nanoscale Physics
The progress in the fabrication of nanoscale systems based on the two-dimensional electron gas at the interface between LaAlO$_3$ and SrTiO$_3$ (LAO/STO) has created an increased demand for simulations of these nanostructures, which typically range in size from tens to hundreds of nanometers. Due to the low lattice constant of LAO/STO, approximately 0.394 nm, these calculations become extremely time-consuming. Here, we present a scaled tight-binding approximation defined on a mesh with size that can be several times larger than in the ordinary approach. The scaled model is analyzed within the context of quantum transport simulations and electronic structure calculations. Our findings demonstrate that the scaled model closely aligns with the ordinary one up to a scaling factor of 8. These results pave the way for more efficient simulations of LAO/STO nanostructures with realistic sizes relevant to experimental applications.
title Scaled tight binding model for a two dimensional electron gas at the (001) LaAlO$_3$/SrTiO$_3$ interface
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2411.11445