Spin texture tunability in Mn$_{1-x}$Ge$_x$Bi$_2$Te$_4$ through varying Ge Concentration
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| Natura: | Preprint |
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2024
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| author | Shikin, A. M. Estyunin, D. A. Zaitsev, N. L. Estyunina, T. P. Eryzhenkov, A. V. Kokh, K. A. Tereshchenko, O. E. Iwata, T. Kuroda, K. Miyamoto, K. Okuda, T. Shimada, K. Tarasov, A. V. |
| author_facet | Shikin, A. M. Estyunin, D. A. Zaitsev, N. L. Estyunina, T. P. Eryzhenkov, A. V. Kokh, K. A. Tereshchenko, O. E. Iwata, T. Kuroda, K. Miyamoto, K. Okuda, T. Shimada, K. Tarasov, A. V. |
| contents | The spin-resolved dispersion dependencies for the topological insulator Mn$_{1-x}$Ge$_x$Bi$_2$Te$_4$ in the $\bar{\rm K}\barΓ\bar{\rm K}'$ path of the Brillouin zone were studied by spin- and angle-resolved photoemission spectroscopy using laser radiation (Laser Spin-ARPES) with variation of the concentration of substitutional Ge atoms (x from 0.1 to 0.8) for in-plane ($s_x$) and out-of-plane ($s_z$) spin orientation. The formation of Rashba-like states is shown, which shift to lower energies with increasing Ge concentration. In the region of Ge concentrations from 50% to 75%, the contribution of these states to the formed spin-dependent dispersions becomes predominant. A pronounced in-plane ($s_y$) spin polarization, asymmetric for opposite $\pm k_\parallel$ directions, is revealed for the Dirac cone states, while the Rashba-like states exhibit a pronounced asymmetry in both in-plane ($s_y$) and out-of-plane ($s_z$) spin polarizations. Theoretical calculations confirmed the asymmetric polarization of the Rashba-like states formed in the $\bar{\rm K}\barΓ\bar{\rm K}'$ path of the BZ, simultaneously for in-plane and out-of-plane spin orientation. Constant energy maps for Rashba-like states show a pronounced $s_z$ spin component along the $\barΓ\bar{\rm K}$ direction, with a sign change as the contour crosses the $\barΓ\bar{\rm M}$ direction. The observed spin polarization can influence the development of spin devices based on magnetic topological insulators. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_11650 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Spin texture tunability in Mn$_{1-x}$Ge$_x$Bi$_2$Te$_4$ through varying Ge Concentration Shikin, A. M. Estyunin, D. A. Zaitsev, N. L. Estyunina, T. P. Eryzhenkov, A. V. Kokh, K. A. Tereshchenko, O. E. Iwata, T. Kuroda, K. Miyamoto, K. Okuda, T. Shimada, K. Tarasov, A. V. Mesoscale and Nanoscale Physics Materials Science The spin-resolved dispersion dependencies for the topological insulator Mn$_{1-x}$Ge$_x$Bi$_2$Te$_4$ in the $\bar{\rm K}\barΓ\bar{\rm K}'$ path of the Brillouin zone were studied by spin- and angle-resolved photoemission spectroscopy using laser radiation (Laser Spin-ARPES) with variation of the concentration of substitutional Ge atoms (x from 0.1 to 0.8) for in-plane ($s_x$) and out-of-plane ($s_z$) spin orientation. The formation of Rashba-like states is shown, which shift to lower energies with increasing Ge concentration. In the region of Ge concentrations from 50% to 75%, the contribution of these states to the formed spin-dependent dispersions becomes predominant. A pronounced in-plane ($s_y$) spin polarization, asymmetric for opposite $\pm k_\parallel$ directions, is revealed for the Dirac cone states, while the Rashba-like states exhibit a pronounced asymmetry in both in-plane ($s_y$) and out-of-plane ($s_z$) spin polarizations. Theoretical calculations confirmed the asymmetric polarization of the Rashba-like states formed in the $\bar{\rm K}\barΓ\bar{\rm K}'$ path of the BZ, simultaneously for in-plane and out-of-plane spin orientation. Constant energy maps for Rashba-like states show a pronounced $s_z$ spin component along the $\barΓ\bar{\rm K}$ direction, with a sign change as the contour crosses the $\barΓ\bar{\rm M}$ direction. The observed spin polarization can influence the development of spin devices based on magnetic topological insulators. |
| title | Spin texture tunability in Mn$_{1-x}$Ge$_x$Bi$_2$Te$_4$ through varying Ge Concentration |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2411.11650 |