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Main Authors: Forbus, Jason, Wickramaratne, Darshana, Lyons, John L., Zvanut, M. E.
Format: Preprint
Published: 2024
Subjects:
Online Access:https://arxiv.org/abs/2411.12896
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_version_ 1866910705590992896
author Forbus, Jason
Wickramaratne, Darshana
Lyons, John L.
Zvanut, M. E.
author_facet Forbus, Jason
Wickramaratne, Darshana
Lyons, John L.
Zvanut, M. E.
contents We present photo-electron paramagnetic resonance (EPR) measurements and first-principles calculations that indicate germanium (Ge) is a DX-center in AlGaN. Our photo-EPR measurements on Ge-doped AlGaN samples show no EPR spectra in the dark, while persistent EPR spectra is observed upon photoexcitation with photon energies greater than ~1.3 eV. Thermally annealing the samples decreased the EPR signal, with the critical temperature to quench the EPR signal being larger in the lower Al-content sample. Using detailed first-principles calculations of Ge in AlGaN, we show all of these observations can be explained by accounting for the DX configuration of Ge in AlGaN.
format Preprint
id arxiv_https___arxiv_org_abs_2411_12896
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Nonradiative quenching of EPR signals in germanium-doped AlGaN: evidence for DX-center formation
Forbus, Jason
Wickramaratne, Darshana
Lyons, John L.
Zvanut, M. E.
Materials Science
We present photo-electron paramagnetic resonance (EPR) measurements and first-principles calculations that indicate germanium (Ge) is a DX-center in AlGaN. Our photo-EPR measurements on Ge-doped AlGaN samples show no EPR spectra in the dark, while persistent EPR spectra is observed upon photoexcitation with photon energies greater than ~1.3 eV. Thermally annealing the samples decreased the EPR signal, with the critical temperature to quench the EPR signal being larger in the lower Al-content sample. Using detailed first-principles calculations of Ge in AlGaN, we show all of these observations can be explained by accounting for the DX configuration of Ge in AlGaN.
title Nonradiative quenching of EPR signals in germanium-doped AlGaN: evidence for DX-center formation
topic Materials Science
url https://arxiv.org/abs/2411.12896