Stacking-dependent ferroicity of reversed bilayer: altermagnetism or ferroelectricity

Fuente: arXiv
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Main Authors: Sun, Wencong, Ye, Haoshen, Liang, Li, Ding, Ning, Dong, Shuai, Wang, Shan-shan
Format: Preprint
Published: 2024
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author Sun, Wencong
Ye, Haoshen
Liang, Li
Ding, Ning
Dong, Shuai
Wang, Shan-shan
author_facet Sun, Wencong
Ye, Haoshen
Liang, Li
Ding, Ning
Dong, Shuai
Wang, Shan-shan
contents Altermagnetism, as a new branch of magnetism independent of traditional ferromagnetism and antiferromagnetism, has attracted extensive attention recently. At present, researchers have proved several kinds of three-dimensional altermagnets, but research on two-dimensional (2D) altermagnets remains elusive. Here, we propose a method for designing altermagnetism in 2D lattices: bilayer reversed stacking. This method could enable altermagnetism-type spin splitting to occur intrinsically and the spin-splitting can be controlled by crystal chirality. We also demonstrate it through a real material of bilayer PtBr$_3$ with AB' stacking order. Additionally, the combination of stacking order and slidetronics offers new opportunities for electrical writing and magnetic reading of electronic devices. In the case of AC' stacking, interlayer sliding results in reversible spontaneous polarization. This unique combination of antiferromagnetism and sliding ferroelectricity leads to polarization-controlled spin-splitting, thus enabling magnetoelectric coupling, which can be detected by magneto-optical Kerr effect even without net magnetization. Our research highlights that reversed stacking provides a platform to explore rich physical properties of magnetism, ferroelectricity, and spin-splitting.
format Preprint
id arxiv_https___arxiv_org_abs_2411_13182
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Stacking-dependent ferroicity of reversed bilayer: altermagnetism or ferroelectricity
Sun, Wencong
Ye, Haoshen
Liang, Li
Ding, Ning
Dong, Shuai
Wang, Shan-shan
Materials Science
Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
Altermagnetism, as a new branch of magnetism independent of traditional ferromagnetism and antiferromagnetism, has attracted extensive attention recently. At present, researchers have proved several kinds of three-dimensional altermagnets, but research on two-dimensional (2D) altermagnets remains elusive. Here, we propose a method for designing altermagnetism in 2D lattices: bilayer reversed stacking. This method could enable altermagnetism-type spin splitting to occur intrinsically and the spin-splitting can be controlled by crystal chirality. We also demonstrate it through a real material of bilayer PtBr$_3$ with AB' stacking order. Additionally, the combination of stacking order and slidetronics offers new opportunities for electrical writing and magnetic reading of electronic devices. In the case of AC' stacking, interlayer sliding results in reversible spontaneous polarization. This unique combination of antiferromagnetism and sliding ferroelectricity leads to polarization-controlled spin-splitting, thus enabling magnetoelectric coupling, which can be detected by magneto-optical Kerr effect even without net magnetization. Our research highlights that reversed stacking provides a platform to explore rich physical properties of magnetism, ferroelectricity, and spin-splitting.
title Stacking-dependent ferroicity of reversed bilayer: altermagnetism or ferroelectricity
topic Materials Science
Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
url https://arxiv.org/abs/2411.13182