Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs
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arXiv
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| Autores principales: | , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| Acceso en línea: | |
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| _version_ | 1866910873533022208 |
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| author | Xiao, Zhentao Huang, Haimeng Zhang, Zonghao Wang, Chenxing |
| author_facet | Xiao, Zhentao Huang, Haimeng Zhang, Zonghao Wang, Chenxing |
| contents | This paper presents a comprehensive study on aspect-ratio dependent optimization for specific on-resistance of three-dimensional high-k superjunction MOSFETs. The research introduces a Taylor modeling method, overcoming the computational limitations of the Bessel method. It also employs the Chynoweth model for more accurate breakdown voltage determination. The study provides a comparative analysis of four different superjunction structures, across five aspects: electric field, impact ionization integral, aspect ratio dependent optimization, charge imbalance effect and temperature. The findings offer valuable insights for the manufacturing guidance of superjunction structure selection |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_13448 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs Xiao, Zhentao Huang, Haimeng Zhang, Zonghao Wang, Chenxing Applied Physics This paper presents a comprehensive study on aspect-ratio dependent optimization for specific on-resistance of three-dimensional high-k superjunction MOSFETs. The research introduces a Taylor modeling method, overcoming the computational limitations of the Bessel method. It also employs the Chynoweth model for more accurate breakdown voltage determination. The study provides a comparative analysis of four different superjunction structures, across five aspects: electric field, impact ionization integral, aspect ratio dependent optimization, charge imbalance effect and temperature. The findings offer valuable insights for the manufacturing guidance of superjunction structure selection |
| title | Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2411.13448 |