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| Auteurs principaux: | , , , , |
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| Format: | Preprint |
| Publié: |
2024
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| Sujets: | |
| Accès en ligne: | https://arxiv.org/abs/2411.13480 |
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- In this work, we propose a new approach based on positron annihilation spectroscopy to estimate the concentration of vacancy-type defects induced by self-ion irradiation in tungsten at room temperature, 500, and 700°C. Using experimental and Two-component density functional theory calculated annihilation characteristics of various vacancy clusters V$_{n}$ ($n$=1-65) and a positron trapping model associated with the simulated annealing algorithm, vacancy cluster concentration distribution could be extracted from experimental data. The method was validated against simulation results for room-temperature irradiation and transmission electron microscopy observations for higher temperatures. After irradiation at 500 and 700°C, small clusters (<20 vacancies, ~0.85 nm) undetectable by TEM were unveiled, with concentrations exceeding 10$^{25}$ m$^{-3}$, significantly higher than the concentration of TEM-visible defects (10$^{24}$ m$^{-3}$). Moreover, incorporating an oxygen-vacancy complex is deemed necessary to accurately replicate experimental data in samples subjected to high-temperature irradiation.