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Hauptverfasser: Lu, Yue, Chen, Jie, Zhou, Feng, Lau, Yong-Chang, Wisniewski, Piotr, Kaczorowski, Dariusz, Xi, Xue-Kui, Wang, Wen-Hong
Format: Preprint
Veröffentlicht: 2024
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Online-Zugang:https://arxiv.org/abs/2411.14140
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_version_ 1866912128632356864
author Lu, Yue
Chen, Jie
Zhou, Feng
Lau, Yong-Chang
Wisniewski, Piotr
Kaczorowski, Dariusz
Xi, Xue-Kui
Wang, Wen-Hong
author_facet Lu, Yue
Chen, Jie
Zhou, Feng
Lau, Yong-Chang
Wisniewski, Piotr
Kaczorowski, Dariusz
Xi, Xue-Kui
Wang, Wen-Hong
contents The angular dependence of magnetoresistance (MR) in antiferromagnetic half-Heusler HoAuSn single crystals have been systematically studied. Negative MR, as large as 99%, is observed at 9 T, is not restricted to the specific configuration of applied magnetics fields and current, and can persist up to 20 K, much higher than the Neel temperature (TN 1.9 K). Experiments and first-principles calculations suggest that the observed large negative MR is derived from a magnetic field that reconstructs the band structure and induces a Weyl point, which changes the carrier concentration. Taking into consideration that large negative MR has so far been rarely reported, especially in antiferromagnetic materials, it is anticipated that the present work not only offers a guideline for searching materials with large negative MR but also helps to further realize other exotic topological electronic states in a large class of antiferromagnetic half-Heusler compounds.
format Preprint
id arxiv_https___arxiv_org_abs_2411_14140
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Angular dependence of large negative magnetoresistance in a field-induced Weyl semimetal candidate HoAuSn
Lu, Yue
Chen, Jie
Zhou, Feng
Lau, Yong-Chang
Wisniewski, Piotr
Kaczorowski, Dariusz
Xi, Xue-Kui
Wang, Wen-Hong
Materials Science
The angular dependence of magnetoresistance (MR) in antiferromagnetic half-Heusler HoAuSn single crystals have been systematically studied. Negative MR, as large as 99%, is observed at 9 T, is not restricted to the specific configuration of applied magnetics fields and current, and can persist up to 20 K, much higher than the Neel temperature (TN 1.9 K). Experiments and first-principles calculations suggest that the observed large negative MR is derived from a magnetic field that reconstructs the band structure and induces a Weyl point, which changes the carrier concentration. Taking into consideration that large negative MR has so far been rarely reported, especially in antiferromagnetic materials, it is anticipated that the present work not only offers a guideline for searching materials with large negative MR but also helps to further realize other exotic topological electronic states in a large class of antiferromagnetic half-Heusler compounds.
title Angular dependence of large negative magnetoresistance in a field-induced Weyl semimetal candidate HoAuSn
topic Materials Science
url https://arxiv.org/abs/2411.14140