Crack-free Sc$_{x}$Al$_{1-x}$N(000$\bar{1}$) layers grown on Si(111) by plasma-assisted molecular beam epitaxy
Fuente:
arXiv
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866909399750017024 |
|---|---|
| author | Dinh, Duc V. Chen, Zhuohui Brandt, Oliver |
| author_facet | Dinh, Duc V. Chen, Zhuohui Brandt, Oliver |
| contents | We investigate the synthesis of 340-nm-thick Sc$_x$Al$_{1-x}$N layers with $0 \leq x \leq 0.35$ on AlN-buffered Si(111) by plasma-assisted molecular beam epitaxy. We employ an AlN nucleation layer under conditions giving rise to single-domain N-polar [(000$\bar{1}$)-oriented] layers, as demonstrated by the ($3 \times 3$) pattern observed in reflection high-energy electron diffraction and confirmed by KOH etching. The subsequent growth of pure wurtzite Sc$_x$Al$_{1-x}$N layers with $x \leq 0.1$ is feasible at temperatures $\leq$ 740°C. However, layers with $x \geq 0.2$ grown at 740°C develop cracks due the high thermal mismatch between Sc$_x$Al$_{1-x}$N and Si. Lowering the growth temperature to 500°C not only prevents cracking but also improves the crystallinity of the layers. For Sc$_{0.3}$Al$_{0.7}$N layers grown at 500°C, additional x-ray reflections due to intermetallic AlSc and Al$_3$Sc inclusions are observed. The formation of these compounds can be inhibited by lowering the temperature further to 300°C. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_14872 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Crack-free Sc$_{x}$Al$_{1-x}$N(000$\bar{1}$) layers grown on Si(111) by plasma-assisted molecular beam epitaxy Dinh, Duc V. Chen, Zhuohui Brandt, Oliver Materials Science Applied Physics We investigate the synthesis of 340-nm-thick Sc$_x$Al$_{1-x}$N layers with $0 \leq x \leq 0.35$ on AlN-buffered Si(111) by plasma-assisted molecular beam epitaxy. We employ an AlN nucleation layer under conditions giving rise to single-domain N-polar [(000$\bar{1}$)-oriented] layers, as demonstrated by the ($3 \times 3$) pattern observed in reflection high-energy electron diffraction and confirmed by KOH etching. The subsequent growth of pure wurtzite Sc$_x$Al$_{1-x}$N layers with $x \leq 0.1$ is feasible at temperatures $\leq$ 740°C. However, layers with $x \geq 0.2$ grown at 740°C develop cracks due the high thermal mismatch between Sc$_x$Al$_{1-x}$N and Si. Lowering the growth temperature to 500°C not only prevents cracking but also improves the crystallinity of the layers. For Sc$_{0.3}$Al$_{0.7}$N layers grown at 500°C, additional x-ray reflections due to intermetallic AlSc and Al$_3$Sc inclusions are observed. The formation of these compounds can be inhibited by lowering the temperature further to 300°C. |
| title | Crack-free Sc$_{x}$Al$_{1-x}$N(000$\bar{1}$) layers grown on Si(111) by plasma-assisted molecular beam epitaxy |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2411.14872 |