Ultra-High-Efficiency Dual-Band Thin-Film Lithium Niobate Modulator Incorporating Low-k Underfill with 220 GHz Extrapolated Bandwidth for 390 Gbit/s PAM8 Transmission
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866909399968120832 |
|---|---|
| author | Liu, Hao He, Yutong Xiong, Bing Sun, Changzheng Hao, Zhibiao Wang, Lai Wang, Jian Han, Yanjun Li, Hongtao Gan, Lin Luo, Yi |
| author_facet | Liu, Hao He, Yutong Xiong, Bing Sun, Changzheng Hao, Zhibiao Wang, Lai Wang, Jian Han, Yanjun Li, Hongtao Gan, Lin Luo, Yi |
| contents | High-performance electro-optic modulators play a critical role in modern telecommunication networks and intra-datacenter interconnects. Low driving voltage, large electro-optic bandwidth, compact device size, and multi-band operation ability are essential for various application scenarios, especially energy-efficient high-speed data transmission. However, it is challenging to meet all these requirements simultaneously. Here, we demonstrate a high-performance dual-band thin-film lithium niobate electro-optic modulator with low-k underfill to achieve overall performance improvement. The low-k material helps reduce the RF loss of the modulator and achieve perfect velocity matching with narrow electrode gap to overcome the voltage-bandwidth limitation, extending electro-optic bandwidth and enhancing modulation efficiency simultaneously. The fabricated 7-mm-long modulator exhibits a low half-wave voltage of 1.9 V at C-band and 1.54 V at O-band, featuring a low half-wave voltage-length product of 1.33 V*cm and 1.08 V*cm, respectively. Meanwhile, the novel design yields an ultra-wide extrapolated 3 dB bandwidth of 220 GHz (218 GHz) in the C-band (O-band). High-speed data transmission in both C- and O-bands using the same device has been demonstrated for the first time by PAM8 with data rates up to 390 Gbit/s, corresponding to a record-low energy consumption of 0.69 fJ/bit for next-generation cost-effective ultra-high-speed optical communications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_15037 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Ultra-High-Efficiency Dual-Band Thin-Film Lithium Niobate Modulator Incorporating Low-k Underfill with 220 GHz Extrapolated Bandwidth for 390 Gbit/s PAM8 Transmission Liu, Hao He, Yutong Xiong, Bing Sun, Changzheng Hao, Zhibiao Wang, Lai Wang, Jian Han, Yanjun Li, Hongtao Gan, Lin Luo, Yi Optics Applied Physics High-performance electro-optic modulators play a critical role in modern telecommunication networks and intra-datacenter interconnects. Low driving voltage, large electro-optic bandwidth, compact device size, and multi-band operation ability are essential for various application scenarios, especially energy-efficient high-speed data transmission. However, it is challenging to meet all these requirements simultaneously. Here, we demonstrate a high-performance dual-band thin-film lithium niobate electro-optic modulator with low-k underfill to achieve overall performance improvement. The low-k material helps reduce the RF loss of the modulator and achieve perfect velocity matching with narrow electrode gap to overcome the voltage-bandwidth limitation, extending electro-optic bandwidth and enhancing modulation efficiency simultaneously. The fabricated 7-mm-long modulator exhibits a low half-wave voltage of 1.9 V at C-band and 1.54 V at O-band, featuring a low half-wave voltage-length product of 1.33 V*cm and 1.08 V*cm, respectively. Meanwhile, the novel design yields an ultra-wide extrapolated 3 dB bandwidth of 220 GHz (218 GHz) in the C-band (O-band). High-speed data transmission in both C- and O-bands using the same device has been demonstrated for the first time by PAM8 with data rates up to 390 Gbit/s, corresponding to a record-low energy consumption of 0.69 fJ/bit for next-generation cost-effective ultra-high-speed optical communications. |
| title | Ultra-High-Efficiency Dual-Band Thin-Film Lithium Niobate Modulator Incorporating Low-k Underfill with 220 GHz Extrapolated Bandwidth for 390 Gbit/s PAM8 Transmission |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2411.15037 |