Versatile Top-Down Patterning Technique for Perovskite On-Chip Integration

Fuente: arXiv
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Auteurs principaux: Fabrizi, Federico, Goudarzi, Saeed, Khan, Sana, Mohammad, Tauheed, Starodubtceva, Liudmila, Cegielski, Piotr J., Thiel, Felix, Özen, Sercan, Schiffer, Maximilian, Lang, Felix, Bolívar, Peter Haring, Riedl, Thomas, Müller-Newen, Gerhard, Anantharaman, Surendra B., Mohammadi, Maryam, Lemme, Max C.
Format: Preprint
Publié: 2024
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author Fabrizi, Federico
Goudarzi, Saeed
Khan, Sana
Mohammad, Tauheed
Starodubtceva, Liudmila
Cegielski, Piotr J.
Thiel, Felix
Özen, Sercan
Schiffer, Maximilian
Lang, Felix
Bolívar, Peter Haring
Riedl, Thomas
Müller-Newen, Gerhard
Anantharaman, Surendra B.
Mohammadi, Maryam
Lemme, Max C.
author_facet Fabrizi, Federico
Goudarzi, Saeed
Khan, Sana
Mohammad, Tauheed
Starodubtceva, Liudmila
Cegielski, Piotr J.
Thiel, Felix
Özen, Sercan
Schiffer, Maximilian
Lang, Felix
Bolívar, Peter Haring
Riedl, Thomas
Müller-Newen, Gerhard
Anantharaman, Surendra B.
Mohammadi, Maryam
Lemme, Max C.
contents Metal-halide perovskites (MHPs) have exciting optoelectronic properties and are under investigation for various applications, such as photovoltaics, light-emitting diodes, and lasers. An essential step towards exploiting the full potential of this class of materials is their large-scale, on-chip integration with high-resolution, top-down patterning. The development of such patterning methods for perovskite films is challenging because of their intrinsic ionic nature and adverse reactions with the solvents used in standard lithography processes. Here, we introduce a versatile and precise method comprising photolithography and reactive ion etching (RIE) processes that can be tuned to accommodate different perovskite compositions and morphologies. Our method utilizes conventional photoresists at reduced temperatures to create micron-sized features down to 1 $μ$m, providing high reproducibility from chip to chip. The patterning technique is validated through atomic force microscopy (AFM), X-ray diffraction (XRD), optical spectroscopy, and scanning electron microscopy (SEM). It enables the scalable and high-throughput on-chip monolithic integration of MHPs.
format Preprint
id arxiv_https___arxiv_org_abs_2411_15286
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Versatile Top-Down Patterning Technique for Perovskite On-Chip Integration
Fabrizi, Federico
Goudarzi, Saeed
Khan, Sana
Mohammad, Tauheed
Starodubtceva, Liudmila
Cegielski, Piotr J.
Thiel, Felix
Özen, Sercan
Schiffer, Maximilian
Lang, Felix
Bolívar, Peter Haring
Riedl, Thomas
Müller-Newen, Gerhard
Anantharaman, Surendra B.
Mohammadi, Maryam
Lemme, Max C.
Materials Science
Applied Physics
Metal-halide perovskites (MHPs) have exciting optoelectronic properties and are under investigation for various applications, such as photovoltaics, light-emitting diodes, and lasers. An essential step towards exploiting the full potential of this class of materials is their large-scale, on-chip integration with high-resolution, top-down patterning. The development of such patterning methods for perovskite films is challenging because of their intrinsic ionic nature and adverse reactions with the solvents used in standard lithography processes. Here, we introduce a versatile and precise method comprising photolithography and reactive ion etching (RIE) processes that can be tuned to accommodate different perovskite compositions and morphologies. Our method utilizes conventional photoresists at reduced temperatures to create micron-sized features down to 1 $μ$m, providing high reproducibility from chip to chip. The patterning technique is validated through atomic force microscopy (AFM), X-ray diffraction (XRD), optical spectroscopy, and scanning electron microscopy (SEM). It enables the scalable and high-throughput on-chip monolithic integration of MHPs.
title Versatile Top-Down Patterning Technique for Perovskite On-Chip Integration
topic Materials Science
Applied Physics
url https://arxiv.org/abs/2411.15286