Temperature dependent spin dynamics in La$_{0.67}$Sr$_{0.33}$MnO$_3$/Pt bilayers
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866910933945679872 |
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| author | Sahoo, Biswajit K, Akilan Matthews, Katherine Pofelski, Alexandre Frano, Alex Fullerton, Eric E Petit-Watelot, Sebastien Sanchez, Juan-Carlos Rojas Das, Sarmistha |
| author_facet | Sahoo, Biswajit K, Akilan Matthews, Katherine Pofelski, Alexandre Frano, Alex Fullerton, Eric E Petit-Watelot, Sebastien Sanchez, Juan-Carlos Rojas Das, Sarmistha |
| contents | Complex ferromagnetic oxides such as La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) offer pathways for creating energy efficient spintronic devices with new functionalities. LSMO exhibits high-temperature ferromagnetism, half metallicity, sharp resonance linewidth, low damping and a large anisotropic magnetoresistance response. Combined with Pt, a proven material with high spin-charge conversion efficiency, LSMO can be used to create robust nano-oscillators for neuromorphic computing. Ferromagnetic resonance (FMR) and device level spin-pumping FMR measurements are performed to investigate the magnetization dynamics and spin transport in NdGaO3(110)/LSMO(15 nm)/Pt(0 and 5 nm) thin films ranging from 300K to 90K and compare the device performance with Py(7 nm)/Pt(5 nm) sample. The spin current pumped into Pt is quantified to determine the temperature dependent influence of interfacial interactions. The generated spin current in the micro-device is maximum at 170K for the optimally grown LSMO/Pt films. Additionally, this bilayer system exhibits low magnetic Gilbert damping (0.002), small linewidth (12 Oe) and a large spin Hall angle ($\approx$ 3.2%) at 170K. By fine-tuning the LSMO/Pt interface quality and integrating it into the device structure, the system exhibits a fourfold enhancement in signal output for LSMO/Pt devices compared to the Pt/Py system. Such robust device level performance can pave way for energy-efficient spintronic based devices. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2411_15417 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Temperature dependent spin dynamics in La$_{0.67}$Sr$_{0.33}$MnO$_3$/Pt bilayers Sahoo, Biswajit K, Akilan Matthews, Katherine Pofelski, Alexandre Frano, Alex Fullerton, Eric E Petit-Watelot, Sebastien Sanchez, Juan-Carlos Rojas Das, Sarmistha Materials Science Complex ferromagnetic oxides such as La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) offer pathways for creating energy efficient spintronic devices with new functionalities. LSMO exhibits high-temperature ferromagnetism, half metallicity, sharp resonance linewidth, low damping and a large anisotropic magnetoresistance response. Combined with Pt, a proven material with high spin-charge conversion efficiency, LSMO can be used to create robust nano-oscillators for neuromorphic computing. Ferromagnetic resonance (FMR) and device level spin-pumping FMR measurements are performed to investigate the magnetization dynamics and spin transport in NdGaO3(110)/LSMO(15 nm)/Pt(0 and 5 nm) thin films ranging from 300K to 90K and compare the device performance with Py(7 nm)/Pt(5 nm) sample. The spin current pumped into Pt is quantified to determine the temperature dependent influence of interfacial interactions. The generated spin current in the micro-device is maximum at 170K for the optimally grown LSMO/Pt films. Additionally, this bilayer system exhibits low magnetic Gilbert damping (0.002), small linewidth (12 Oe) and a large spin Hall angle ($\approx$ 3.2%) at 170K. By fine-tuning the LSMO/Pt interface quality and integrating it into the device structure, the system exhibits a fourfold enhancement in signal output for LSMO/Pt devices compared to the Pt/Py system. Such robust device level performance can pave way for energy-efficient spintronic based devices. |
| title | Temperature dependent spin dynamics in La$_{0.67}$Sr$_{0.33}$MnO$_3$/Pt bilayers |
| topic | Materials Science |
| url | https://arxiv.org/abs/2411.15417 |