Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab
Fuente:
arXiv
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Veröffentlicht: |
2024
|
| Schlagworte: | |
| Online-Zugang: | |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| _version_ | 1866915033112379392 |
|---|---|
| author | Mitard, Jerome Kljucar, Luka Rassoul, Nouredine Dekkers, Harold van Setten, Michiel Chasin, Adrian Vaisman Pourtois, Geoffrey Belmonte, Attilio Donadio, Gabriele Luca Goux, Ludovic Mao, Ming Puliyalil, Harinarayanan Teugels, Lieve Tsvetanova, Diana Nag, Manoj Steudel, Soeren Borniquel, Jose Ignacio del Agua Ramalingam, Jothilingam Delhougne, Romain Wilson, Chris J. Tokei, Zsolt Kar, Gouri Sankar |
| author_facet | Mitard, Jerome Kljucar, Luka Rassoul, Nouredine Dekkers, Harold van Setten, Michiel Chasin, Adrian Vaisman Pourtois, Geoffrey Belmonte, Attilio Donadio, Gabriele Luca Goux, Ludovic Mao, Ming Puliyalil, Harinarayanan Teugels, Lieve Tsvetanova, Diana Nag, Manoj Steudel, Soeren Borniquel, Jose Ignacio del Agua Ramalingam, Jothilingam Delhougne, Romain Wilson, Chris J. Tokei, Zsolt Kar, Gouri Sankar |
| contents | Back and double gate IGZO nFETs have been demonstrated down to 120nm and 70nm respectively leveraging 300mm fab processing. While the passivation of oxygen vacancies in IGZO is challenging with an integration of front side gate, a scaled back gated flow has been optimized by multiplying design of experiments around contacts and material engineering. We then successfully demonstrated sub-40mV $σ$(VTH_ON) in scaled IGZO nFETs. Regarding the performance and the VTH_ON control, a new IGZO phase is also reported. A model of dopants location is proposed to better explain the experimental results reported in literature. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_16299 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab Mitard, Jerome Kljucar, Luka Rassoul, Nouredine Dekkers, Harold van Setten, Michiel Chasin, Adrian Vaisman Pourtois, Geoffrey Belmonte, Attilio Donadio, Gabriele Luca Goux, Ludovic Mao, Ming Puliyalil, Harinarayanan Teugels, Lieve Tsvetanova, Diana Nag, Manoj Steudel, Soeren Borniquel, Jose Ignacio del Agua Ramalingam, Jothilingam Delhougne, Romain Wilson, Chris J. Tokei, Zsolt Kar, Gouri Sankar Materials Science Back and double gate IGZO nFETs have been demonstrated down to 120nm and 70nm respectively leveraging 300mm fab processing. While the passivation of oxygen vacancies in IGZO is challenging with an integration of front side gate, a scaled back gated flow has been optimized by multiplying design of experiments around contacts and material engineering. We then successfully demonstrated sub-40mV $σ$(VTH_ON) in scaled IGZO nFETs. Regarding the performance and the VTH_ON control, a new IGZO phase is also reported. A model of dopants location is proposed to better explain the experimental results reported in literature. |
| title | Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab |
| topic | Materials Science |
| url | https://arxiv.org/abs/2411.16299 |