Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C
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arXiv
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866917961701261312 |
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| author | He, Yunfei Moore, David C. Wang, Yubo Ware, Spencer Ma, Sizhe Pradhan, Dhiren K. Hu, Zekun Du, Xingyu Kennedy, W. Joshua Glavin, Nicholas R. Olsson III, Roy H. Jariwala, Deep |
| author_facet | He, Yunfei Moore, David C. Wang, Yubo Ware, Spencer Ma, Sizhe Pradhan, Dhiren K. Hu, Zekun Du, Xingyu Kennedy, W. Joshua Glavin, Nicholas R. Olsson III, Roy H. Jariwala, Deep |
| contents | Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature non-volatile memory applications. Our 30-nm thick ferroelectric Al0.68Sc0.32N film grown on SiC exhibits stable and robust ferroelectric switching up to 1000°C. The coercive field decreases linearly from -6.4/+11.9 MV cm-1 at room temperature to -3.1/+7.8 MV cm-1 at 800°C, further reducing to -2.5 MV cm-1 at 1000°C. At 600°C, the devices achieve remarkable reliability with ~2000 endurance cycles and over at least 100 hours of retention with negligible polarization loss. At 800°C, the devices retain data for at least 10,000 seconds and exceed 400 write cycles. Our results further highlight the potential for ferroelectric AlScN thin-films particularly when paired with SiC semiconductor substrates for high-temperature non-volatile memory. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_16652 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C He, Yunfei Moore, David C. Wang, Yubo Ware, Spencer Ma, Sizhe Pradhan, Dhiren K. Hu, Zekun Du, Xingyu Kennedy, W. Joshua Glavin, Nicholas R. Olsson III, Roy H. Jariwala, Deep Materials Science Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature non-volatile memory applications. Our 30-nm thick ferroelectric Al0.68Sc0.32N film grown on SiC exhibits stable and robust ferroelectric switching up to 1000°C. The coercive field decreases linearly from -6.4/+11.9 MV cm-1 at room temperature to -3.1/+7.8 MV cm-1 at 800°C, further reducing to -2.5 MV cm-1 at 1000°C. At 600°C, the devices achieve remarkable reliability with ~2000 endurance cycles and over at least 100 hours of retention with negligible polarization loss. At 800°C, the devices retain data for at least 10,000 seconds and exceed 400 write cycles. Our results further highlight the potential for ferroelectric AlScN thin-films particularly when paired with SiC semiconductor substrates for high-temperature non-volatile memory. |
| title | Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C |
| topic | Materials Science |
| url | https://arxiv.org/abs/2411.16652 |