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Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment

Fuente: arXiv

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Bibliographic Details
Main Authors:	Malagon, Daniel, Torrens, Gabriel, Segura, Jaume, Bota, Sebastia A.
Format:	Preprint
Published:	2024
Subjects:	Instrumentation and Detectors Hardware Architecture High Energy Physics - Experiment
Online Access:	Acceder al recurso
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