Documenti analoghi

• Oxygen Doping in Ferroelectric Wurtzite‐type Al0.73Sc0.27N: Improved Leakage and Polarity Control
  di: Md Redwanul Islam, et al.
  Pubblicazione: (2025)
• Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD-Grown Single Crystalline Al$_{0.85}$Sc$_{0.15}$N
  di: Wolff, Niklas, et al.
  Pubblicazione: (2023)
• Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy
  di: Wolff, Niklas, et al.
  Pubblicazione: (2025)
• Interfacial Polarization Switching in Al 0.92 Sc 0.08 N/GaN Heterostructures Grown by Sputter Epitaxy
  di: Niklas Wolff, et al.
  Pubblicazione: (2025)
• On the exceptional temperature stability of ferroelectric AlScN thin films
  di: Islam, MD Redwanul, et al.
  Pubblicazione: (2021)