Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films
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arXiv
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| Autori principali: | , , , , , , , , , , |
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| Natura: | Preprint |
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2024
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| author | Islam, Md Redwanul Wolff, Niklas Schönweger, Georg Kreutzer, Tom-Niklas Brown, Margaret Gremmel, Maike Straňák, Patrik Kirste, Lutz Brennecka, Geoff L. Fichtner, Simon Kienle, Lorenz |
| author_facet | Islam, Md Redwanul Wolff, Niklas Schönweger, Georg Kreutzer, Tom-Niklas Brown, Margaret Gremmel, Maike Straňák, Patrik Kirste, Lutz Brennecka, Geoff L. Fichtner, Simon Kienle, Lorenz |
| contents | This article examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact on the material structure and the polarity of the as-grown films. The O in the bulk Al0.73Sc0.27N was introduced through an external gas source during the reactive sputter process. In comparison to samples without doping, O-doped films showed almost a fourfold reduction of the leakage current near the coercive field. In addition, doping resulted in the reduction of the steady-state leakage currents by roughly one order of magnitude sub-coercive fields. Microstructure analysis using X-ray diffraction 1and scanning transmission electron microscopy (STEM) revealed no significant structural degradation of the bulk Al0.73Sc0.27N. In case of the maximum O-doped film, the c-axis out-of-plane texture increased by only 20% from 1.8° and chemical mapping revealed a uniform distribution of oxygen incorporation into the bulk. Our results further demonstrate the ability to control the as-deposited polarity of Al0.73Sc0.27N via the O-concentration, changing from nitrogen- to metal-polar orientation. Thus, this article presents a promising approach to mitigate the leakage current in wurtzite-type Al0.73Sc0.27N without incurring any significant structural degradation of the bulk thin film quality, thereby making ferroelectric nitrides more suitable for microelectronic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_17360 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films Islam, Md Redwanul Wolff, Niklas Schönweger, Georg Kreutzer, Tom-Niklas Brown, Margaret Gremmel, Maike Straňák, Patrik Kirste, Lutz Brennecka, Geoff L. Fichtner, Simon Kienle, Lorenz Applied Physics Materials Science This article examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact on the material structure and the polarity of the as-grown films. The O in the bulk Al0.73Sc0.27N was introduced through an external gas source during the reactive sputter process. In comparison to samples without doping, O-doped films showed almost a fourfold reduction of the leakage current near the coercive field. In addition, doping resulted in the reduction of the steady-state leakage currents by roughly one order of magnitude sub-coercive fields. Microstructure analysis using X-ray diffraction 1and scanning transmission electron microscopy (STEM) revealed no significant structural degradation of the bulk Al0.73Sc0.27N. In case of the maximum O-doped film, the c-axis out-of-plane texture increased by only 20% from 1.8° and chemical mapping revealed a uniform distribution of oxygen incorporation into the bulk. Our results further demonstrate the ability to control the as-deposited polarity of Al0.73Sc0.27N via the O-concentration, changing from nitrogen- to metal-polar orientation. Thus, this article presents a promising approach to mitigate the leakage current in wurtzite-type Al0.73Sc0.27N without incurring any significant structural degradation of the bulk thin film quality, thereby making ferroelectric nitrides more suitable for microelectronic applications. |
| title | Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2411.17360 |