Spectroscopic Signature of Local Alloy Fluctuations in InGaN/GaN Multi-Quantum-Disk Light Emitting Diode Heterostructures and Its Impact on the Optical Performance
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| Format: | Preprint |
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2024
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| _version_ | 1866918162096717824 |
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| author | Chatterjee, Soumyadip Sahu, Subhranshu Sekhar Rana, Kanchan Singh Bhunia, Swagata Saha, Dipankar Laha, Apurba |
| author_facet | Chatterjee, Soumyadip Sahu, Subhranshu Sekhar Rana, Kanchan Singh Bhunia, Swagata Saha, Dipankar Laha, Apurba |
| contents | Inhomogeneity-governed carrier localization has been investigated in three sets of InGaN/GaN multi-quantum-disk light-emitting diode (LED) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) under different process conditions. A temperature-dependent study of the luminescence peak positions reveals that samples prepared under certain process conditions exhibit a thermal distribution of carriers from the localized states that show the typical S-shaped dependence in luminescence characteristics. The absence of an S-shaped nature in the other sample prepared with relatively higher In-flux infers a superior homogeneity in alloy composition. Further investigation manifested superior optical properties for the samples where the S-shape nature is found to be absent. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_18175 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Spectroscopic Signature of Local Alloy Fluctuations in InGaN/GaN Multi-Quantum-Disk Light Emitting Diode Heterostructures and Its Impact on the Optical Performance Chatterjee, Soumyadip Sahu, Subhranshu Sekhar Rana, Kanchan Singh Bhunia, Swagata Saha, Dipankar Laha, Apurba Applied Physics Materials Science Inhomogeneity-governed carrier localization has been investigated in three sets of InGaN/GaN multi-quantum-disk light-emitting diode (LED) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) under different process conditions. A temperature-dependent study of the luminescence peak positions reveals that samples prepared under certain process conditions exhibit a thermal distribution of carriers from the localized states that show the typical S-shaped dependence in luminescence characteristics. The absence of an S-shaped nature in the other sample prepared with relatively higher In-flux infers a superior homogeneity in alloy composition. Further investigation manifested superior optical properties for the samples where the S-shape nature is found to be absent. |
| title | Spectroscopic Signature of Local Alloy Fluctuations in InGaN/GaN Multi-Quantum-Disk Light Emitting Diode Heterostructures and Its Impact on the Optical Performance |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2411.18175 |