Measuring direct flexoelectricity at the nanoscale
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arXiv
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| Format: | Preprint |
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2024
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| _version_ | 1866917851086979072 |
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| author | Moreno-Garcia, Daniel Villanueva, Luis Guillermo |
| author_facet | Moreno-Garcia, Daniel Villanueva, Luis Guillermo |
| contents | Flexoelectricity is a property of all dielectric materials, where inhomogeneous strain induces electrical polarization. This effect becomes particularly prominent at the nanoscale where larger strain gradients can be obtained. While flexoelectric charges have been measured in mm-scale systems, direct measurements in nanoscale-thickness materials have not yet been achieved. Given that one of the most prominent applications of flexoelectricity is in nano-electro-mechanical systems (NEMS), confirming the presence and magnitude of the effect at these scales is essential. This study presents the first-ever measurements of flexoelectric-generated charges (direct effect) in nanoscale-thickness materials, using cantilevers with a 50 nm hafnium oxide layer. We confirm that the estimated flexoelectric coefficient from said measurements aligns with the values obtained from complementary experiments using the flexoelectric inverse effect. Additionally, by changing the cantilever geometry (modifying the width of the cantilevers), we demonstrate a 40% increase in the effective flexoelectric coefficient, explained by the interplay of different flexoelectric tensor components. These findings not only validate the presence of flexoelectric effects at the nanoscale but also open the possibility for full flexoelectric transduction of the motion in NEMS/MEMS devices. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2411_19118 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Measuring direct flexoelectricity at the nanoscale Moreno-Garcia, Daniel Villanueva, Luis Guillermo Applied Physics Materials Science Flexoelectricity is a property of all dielectric materials, where inhomogeneous strain induces electrical polarization. This effect becomes particularly prominent at the nanoscale where larger strain gradients can be obtained. While flexoelectric charges have been measured in mm-scale systems, direct measurements in nanoscale-thickness materials have not yet been achieved. Given that one of the most prominent applications of flexoelectricity is in nano-electro-mechanical systems (NEMS), confirming the presence and magnitude of the effect at these scales is essential. This study presents the first-ever measurements of flexoelectric-generated charges (direct effect) in nanoscale-thickness materials, using cantilevers with a 50 nm hafnium oxide layer. We confirm that the estimated flexoelectric coefficient from said measurements aligns with the values obtained from complementary experiments using the flexoelectric inverse effect. Additionally, by changing the cantilever geometry (modifying the width of the cantilevers), we demonstrate a 40% increase in the effective flexoelectric coefficient, explained by the interplay of different flexoelectric tensor components. These findings not only validate the presence of flexoelectric effects at the nanoscale but also open the possibility for full flexoelectric transduction of the motion in NEMS/MEMS devices. |
| title | Measuring direct flexoelectricity at the nanoscale |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2411.19118 |