Hot-carrier trapping preserves high quantum yields but limits optical gain in InP-based quantum dots

Fuente: arXiv

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Bibliographic Details
Main Authors:	Vonk, Sander J. W., Prins, P. Tim, Wang, Tong, Matthys, Jan, Giordano, Luca, Schiettecatte, Pieter, Mondal, Navendu, van der Hoeven, Jessi E. S., Hopper, Thomas R., Hens, Zeger, Geiregat, Pieter, Bakulin, Artem A., Rabouw, Freddy T.
Format:	Preprint
Published:	2024
Subjects:	Materials Science Mesoscale and Nanoscale Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2411.19565