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Hot-carrier trapping preserves high quantum yields but limits optical gain in InP-based quantum dots

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Vonk, Sander J. W., Prins, P. Tim, Wang, Tong, Matthys, Jan, Giordano, Luca, Schiettecatte, Pieter, Mondal, Navendu, van der Hoeven, Jessi E. S., Hopper, Thomas R., Hens, Zeger, Geiregat, Pieter, Bakulin, Artem A., Rabouw, Freddy T.
Formato:	Preprint
Publicado:	2024
Materias:	Materials Science Mesoscale and Nanoscale Physics
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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