Understanding the anisotropic growth of VS grown PbSnTe nanowires
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arXiv
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| Main Authors: | , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866917851936325632 |
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| author | Mientjes, Mathijs G. C. Guan, Xin Verheijen, Marcel A. Bakkers, Erik P. A. M. |
| author_facet | Mientjes, Mathijs G. C. Guan, Xin Verheijen, Marcel A. Bakkers, Erik P. A. M. |
| contents | PbSnTe is a topological crystalline insulator (TCI), which holds promise for scattering-free transport channels and fault-tolerant quantum computing. As the topologically non-trivial states live on the surface, the nanowire geometry, with a high surface-to-volume ratio, is ideal for probing these states. The controlled growth of PbSnTe nanowires using molecular beam epitaxy has been shown before, but an understanding of the anisotropic growth and the resulting morphology is lacking. Here, based on experimental observations, we develop a model that describes the evolution of NW morphology as a function of growth time. It is found that the anisotropic morphology can be described by a combination of direct impingement, mask diffusion and facet diffusion which results in a transition from a Te-limited growth regime to a group IV-limited growth regime. This growth model allows us to design more targeted experiments which could lead to a higher flexibility in device design. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_19627 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Understanding the anisotropic growth of VS grown PbSnTe nanowires Mientjes, Mathijs G. C. Guan, Xin Verheijen, Marcel A. Bakkers, Erik P. A. M. Materials Science PbSnTe is a topological crystalline insulator (TCI), which holds promise for scattering-free transport channels and fault-tolerant quantum computing. As the topologically non-trivial states live on the surface, the nanowire geometry, with a high surface-to-volume ratio, is ideal for probing these states. The controlled growth of PbSnTe nanowires using molecular beam epitaxy has been shown before, but an understanding of the anisotropic growth and the resulting morphology is lacking. Here, based on experimental observations, we develop a model that describes the evolution of NW morphology as a function of growth time. It is found that the anisotropic morphology can be described by a combination of direct impingement, mask diffusion and facet diffusion which results in a transition from a Te-limited growth regime to a group IV-limited growth regime. This growth model allows us to design more targeted experiments which could lead to a higher flexibility in device design. |
| title | Understanding the anisotropic growth of VS grown PbSnTe nanowires |
| topic | Materials Science |
| url | https://arxiv.org/abs/2411.19627 |