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Main Authors: Fan, Kaixuan, Hua, Ze, Gu, Siyao, Zhu, Peng, Liu, Guangtong, Ren, Hechen, Shao, Ruiwen, Wang, Zhiwei, Lu, Li, Yang, Fan
Format: Preprint
Published: 2024
Subjects:
Online Access:https://arxiv.org/abs/2412.00701
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author Fan, Kaixuan
Hua, Ze
Gu, Siyao
Zhu, Peng
Liu, Guangtong
Ren, Hechen
Shao, Ruiwen
Wang, Zhiwei
Lu, Li
Yang, Fan
author_facet Fan, Kaixuan
Hua, Ze
Gu, Siyao
Zhu, Peng
Liu, Guangtong
Ren, Hechen
Shao, Ruiwen
Wang, Zhiwei
Lu, Li
Yang, Fan
contents Understanding the physical and chemical processes at the interface of metals and topological insulators is crucial for developing the next generation of topological quantum devices. Here we report the discovery of robust superconductivity in Pd/Bi$_2$Se$_3$ bilayers fabricated by sputtering Pd on the surface of Bi$_2$Se$_3$. Through transmission electron microscopy measurements, we identify that the observed interfacial superconductivity originates from the diffusion of Pd into Bi$_2$Se$_3$. In the diffusion region, Pd chemically reacts with Bi$_2$Se$_3$ and forms a layer of PdBiSe, a known su-perconductor with a bulk transition temperature of 1.5 K. Our work provides a method for in-troducing superconductivity into Bi$_2$Se$_3$, laying the foundation for developing sophisticated Bi$_2$Se$_3$-based topological devices.
format Preprint
id arxiv_https___arxiv_org_abs_2412_00701
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Superconductivity at Pd/Bi$_2$Se$_3$ Interfaces Due to Self-Formed PdBiSe Interlayers
Fan, Kaixuan
Hua, Ze
Gu, Siyao
Zhu, Peng
Liu, Guangtong
Ren, Hechen
Shao, Ruiwen
Wang, Zhiwei
Lu, Li
Yang, Fan
Superconductivity
Materials Science
Understanding the physical and chemical processes at the interface of metals and topological insulators is crucial for developing the next generation of topological quantum devices. Here we report the discovery of robust superconductivity in Pd/Bi$_2$Se$_3$ bilayers fabricated by sputtering Pd on the surface of Bi$_2$Se$_3$. Through transmission electron microscopy measurements, we identify that the observed interfacial superconductivity originates from the diffusion of Pd into Bi$_2$Se$_3$. In the diffusion region, Pd chemically reacts with Bi$_2$Se$_3$ and forms a layer of PdBiSe, a known su-perconductor with a bulk transition temperature of 1.5 K. Our work provides a method for in-troducing superconductivity into Bi$_2$Se$_3$, laying the foundation for developing sophisticated Bi$_2$Se$_3$-based topological devices.
title Superconductivity at Pd/Bi$_2$Se$_3$ Interfaces Due to Self-Formed PdBiSe Interlayers
topic Superconductivity
Materials Science
url https://arxiv.org/abs/2412.00701