Optical excitation of bulk plasmons in n-doped InAsSb thin films : investigating the second viscosity in electron gas

Fuente: arXiv
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Autori principali: Moreau, Antoine, Sakat, Émilie, Hugonin, Jean-Paul, Mottin, Téo, Costard, Aidan, Abdul-Salam, Sarah, Langevin, Denis, Loren, Patricia, Cerutti, Laurent, Flores, Fernando Gonzalez Posada, Taliercio, Thierry
Natura: Preprint
Pubblicazione: 2024
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author Moreau, Antoine
Sakat, Émilie
Hugonin, Jean-Paul
Mottin, Téo
Costard, Aidan
Abdul-Salam, Sarah
Langevin, Denis
Loren, Patricia
Cerutti, Laurent
Flores, Fernando Gonzalez Posada
Taliercio, Thierry
author_facet Moreau, Antoine
Sakat, Émilie
Hugonin, Jean-Paul
Mottin, Téo
Costard, Aidan
Abdul-Salam, Sarah
Langevin, Denis
Loren, Patricia
Cerutti, Laurent
Flores, Fernando Gonzalez Posada
Taliercio, Thierry
contents We demonstrate that including the second viscosity of an electron gas in the hydrodynamic model allows for highly accurate modeling of the optical response of heavily doped semiconductors. In our setup, which improves resonance visibility compared to previous approaches, plasmon resonances become more distinct, allowing for a detailed analysis of the underlying physics. With advanced fitting techniques based on a physics-informed cost function and a tailored optimization algorithm, we obtain a close agreement between simulations and experimental data across different sample thicknesses. This enhanced resonance visibility, combined with our integrated approach, shows that key parameters such as doping level and effective electron mass, as well as the second viscosity of the electron gas, can be retrieved from a single optical measurement. The spatial dispersion taken into account in the hydrodynamic framework is essential for accurately describing the optical response of plasmonic materials in this frequency range and is likely to become a standard modeling approach.
format Preprint
id arxiv_https___arxiv_org_abs_2412_01466
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Optical excitation of bulk plasmons in n-doped InAsSb thin films : investigating the second viscosity in electron gas
Moreau, Antoine
Sakat, Émilie
Hugonin, Jean-Paul
Mottin, Téo
Costard, Aidan
Abdul-Salam, Sarah
Langevin, Denis
Loren, Patricia
Cerutti, Laurent
Flores, Fernando Gonzalez Posada
Taliercio, Thierry
Optics
Mesoscale and Nanoscale Physics
Applied Physics
Computational Physics
We demonstrate that including the second viscosity of an electron gas in the hydrodynamic model allows for highly accurate modeling of the optical response of heavily doped semiconductors. In our setup, which improves resonance visibility compared to previous approaches, plasmon resonances become more distinct, allowing for a detailed analysis of the underlying physics. With advanced fitting techniques based on a physics-informed cost function and a tailored optimization algorithm, we obtain a close agreement between simulations and experimental data across different sample thicknesses. This enhanced resonance visibility, combined with our integrated approach, shows that key parameters such as doping level and effective electron mass, as well as the second viscosity of the electron gas, can be retrieved from a single optical measurement. The spatial dispersion taken into account in the hydrodynamic framework is essential for accurately describing the optical response of plasmonic materials in this frequency range and is likely to become a standard modeling approach.
title Optical excitation of bulk plasmons in n-doped InAsSb thin films : investigating the second viscosity in electron gas
topic Optics
Mesoscale and Nanoscale Physics
Applied Physics
Computational Physics
url https://arxiv.org/abs/2412.01466