Impact of Thermal Effects on the Current-Tunable Electrical Transport in the Ferrimagnetic Semiconductor Mn$_3$Si$_2$Te$_6$
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| Main Authors: | , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866913998868316160 |
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| author | Zhang, Yiyue Jin, Xin Li, ZeYu Yang, Kunya Wei, Linlin Mi, Xinrun Wang, Aifeng Zhou, Xiaoyuan Yang, Xiaolong Chai, Yisheng He, Mingquan |
| author_facet | Zhang, Yiyue Jin, Xin Li, ZeYu Yang, Kunya Wei, Linlin Mi, Xinrun Wang, Aifeng Zhou, Xiaoyuan Yang, Xiaolong Chai, Yisheng He, Mingquan |
| contents | In the ferrimagnetic semiconductor Mn$_3$Si$_2$Te$_6$, a colossal magnetoresistance (CMR) is observed only when a magnetic field is applied along the magnetic hard axis ($\mathbf{H}\parallel c$). This phenomenon suggests an unconventional CMR mechanism potentially driven by the interplay between magnetism, topological band structure, and/or chiral orbital currents (COC). By comparing electrical resistance measurements using continuous direct currents and pulse currents, we found that the current-induced insulator-metal transition, supporting the COC-driven CMR mechanism, is likely a consequence of Joule heating effects. First-principles calculations reveal a pronounced band gap reduction upon tilting the magnetic moments toward the $c$-axis, accompanied by increased carrier concentration and Fermi velocity. Combining spin orientation-dependent electronic structure with Boltzmann transport theory, the calculated electrical resistance closely reproduces the CMR observed experimentally. These findings suggest that the CMR in Mn$_3$Si$_2$Te$_6$ stems primarily from band gap reduction induced by partial polarization of magnetic moments along the magnetic hard axis. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2412_01518 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Impact of Thermal Effects on the Current-Tunable Electrical Transport in the Ferrimagnetic Semiconductor Mn$_3$Si$_2$Te$_6$ Zhang, Yiyue Jin, Xin Li, ZeYu Yang, Kunya Wei, Linlin Mi, Xinrun Wang, Aifeng Zhou, Xiaoyuan Yang, Xiaolong Chai, Yisheng He, Mingquan Materials Science Strongly Correlated Electrons In the ferrimagnetic semiconductor Mn$_3$Si$_2$Te$_6$, a colossal magnetoresistance (CMR) is observed only when a magnetic field is applied along the magnetic hard axis ($\mathbf{H}\parallel c$). This phenomenon suggests an unconventional CMR mechanism potentially driven by the interplay between magnetism, topological band structure, and/or chiral orbital currents (COC). By comparing electrical resistance measurements using continuous direct currents and pulse currents, we found that the current-induced insulator-metal transition, supporting the COC-driven CMR mechanism, is likely a consequence of Joule heating effects. First-principles calculations reveal a pronounced band gap reduction upon tilting the magnetic moments toward the $c$-axis, accompanied by increased carrier concentration and Fermi velocity. Combining spin orientation-dependent electronic structure with Boltzmann transport theory, the calculated electrical resistance closely reproduces the CMR observed experimentally. These findings suggest that the CMR in Mn$_3$Si$_2$Te$_6$ stems primarily from band gap reduction induced by partial polarization of magnetic moments along the magnetic hard axis. |
| title | Impact of Thermal Effects on the Current-Tunable Electrical Transport in the Ferrimagnetic Semiconductor Mn$_3$Si$_2$Te$_6$ |
| topic | Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2412.01518 |