Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors
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arXiv
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| Format: | Preprint |
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2024
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| author | Feldman, Mayer M. Fuchs, Gordian Liu, Tiffany D'Imperio, Luke A. Henry, M. David Shaner, Eric A. Lyon, Stephen A. |
| author_facet | Feldman, Mayer M. Fuchs, Gordian Liu, Tiffany D'Imperio, Luke A. Henry, M. David Shaner, Eric A. Lyon, Stephen A. |
| contents | We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs High-Electron-Mobility Transistors (HEMTs). We integrate this circuit with a Charge-Coupled Device (CCD) to transport the electrons on helium and characterize its performance. We show that this circuit has a Signal-to-Noise ratio (SNR) of $\thicksim$ 2$\frac{e}{\sqrt{Hz}}$ at 102 kHz, an order of magnitude improvement from previous implementations and provides a compelling alternative to few electron sensing with high frequency resonators. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_02018 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors Feldman, Mayer M. Fuchs, Gordian Liu, Tiffany D'Imperio, Luke A. Henry, M. David Shaner, Eric A. Lyon, Stephen A. Mesoscale and Nanoscale Physics We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs High-Electron-Mobility Transistors (HEMTs). We integrate this circuit with a Charge-Coupled Device (CCD) to transport the electrons on helium and characterize its performance. We show that this circuit has a Signal-to-Noise ratio (SNR) of $\thicksim$ 2$\frac{e}{\sqrt{Hz}}$ at 102 kHz, an order of magnitude improvement from previous implementations and provides a compelling alternative to few electron sensing with high frequency resonators. |
| title | Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2412.02018 |