Room-temperature van der Waals magnetoresistive memories with data writing by orbital current in the Weyl semimetal TaIrTe4
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866913595775778816 |
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| author | Li, Dong Liu, Xing-Yu Pan, Zhen-Cun Wang, An-Qi Zhang, Jiantian Yu, Peng Liao, Zhi-Min |
| author_facet | Li, Dong Liu, Xing-Yu Pan, Zhen-Cun Wang, An-Qi Zhang, Jiantian Yu, Peng Liao, Zhi-Min |
| contents | Current-induced out of plane magnetization has been utilized for field-free switching of ferromagnets with perpendicular magnetic anisotropy. Identifying systems capable of energy-efficiently converting charge currents into out of plane orbit- or spin-polarized currents is crucial for advancing magnetic memory technologies. Here we introduce the Berry curvature dipole as a key evaluation factor, directly measurable through nonlinear Hall effects. In the Weyl semimetal TaIrTe4 used in our experiments, applying a current parallel to the Berry curvature dipole results in out of plane orbital magnetization, which governs the field-free perpendicular magnetization switching in TaIrTe4/Fe3GaTe2 heterostructures. Notably, all-electric control of van der Waals magnetoresistive memory at room temperature has been achieved with a low critical current density 2x10^6A/cm2 for data writing. Our findings reveal the connection between nonlinear Hall effects and field-free magnetization switching, highlighting the potential of the Berry curvature dipole in advancing orbitronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_02488 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Room-temperature van der Waals magnetoresistive memories with data writing by orbital current in the Weyl semimetal TaIrTe4 Li, Dong Liu, Xing-Yu Pan, Zhen-Cun Wang, An-Qi Zhang, Jiantian Yu, Peng Liao, Zhi-Min Mesoscale and Nanoscale Physics Materials Science Current-induced out of plane magnetization has been utilized for field-free switching of ferromagnets with perpendicular magnetic anisotropy. Identifying systems capable of energy-efficiently converting charge currents into out of plane orbit- or spin-polarized currents is crucial for advancing magnetic memory technologies. Here we introduce the Berry curvature dipole as a key evaluation factor, directly measurable through nonlinear Hall effects. In the Weyl semimetal TaIrTe4 used in our experiments, applying a current parallel to the Berry curvature dipole results in out of plane orbital magnetization, which governs the field-free perpendicular magnetization switching in TaIrTe4/Fe3GaTe2 heterostructures. Notably, all-electric control of van der Waals magnetoresistive memory at room temperature has been achieved with a low critical current density 2x10^6A/cm2 for data writing. Our findings reveal the connection between nonlinear Hall effects and field-free magnetization switching, highlighting the potential of the Berry curvature dipole in advancing orbitronics. |
| title | Room-temperature van der Waals magnetoresistive memories with data writing by orbital current in the Weyl semimetal TaIrTe4 |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2412.02488 |