Real-Space Imaging of the Band Topology of Transition Metal Dichalcogenides

Fuente: arXiv
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Main Authors: Holbrook, Madisen, Ingham, Julian, Kaplan, Daniel, Holtzman, Luke, Bierman, Brenna, Olson, Nicholas, Nashabeh, Luca, Liu, Song, Zhu, Xiaoyang, Rhodes, Daniel, Barmak, Katayun, Hone, James, Queiroz, Raquel, Pasupathy, Abhay
Format: Preprint
Published: 2024
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author Holbrook, Madisen
Ingham, Julian
Kaplan, Daniel
Holtzman, Luke
Bierman, Brenna
Olson, Nicholas
Nashabeh, Luca
Liu, Song
Zhu, Xiaoyang
Rhodes, Daniel
Barmak, Katayun
Hone, James
Queiroz, Raquel
Pasupathy, Abhay
author_facet Holbrook, Madisen
Ingham, Julian
Kaplan, Daniel
Holtzman, Luke
Bierman, Brenna
Olson, Nicholas
Nashabeh, Luca
Liu, Song
Zhu, Xiaoyang
Rhodes, Daniel
Barmak, Katayun
Hone, James
Queiroz, Raquel
Pasupathy, Abhay
contents The topological properties of Bloch bands are intimately tied to the structure of their electronic wavefunctions within the unit cell of a crystal. Here, we show that scanning tunneling microscopy (STM) measurements on the prototypical transition metal dichalcogenide (TMD) semiconductor WSe$_2$ can be used to unambiguously fix the location of the Wannier center of the valence band. Using site-specific substitutional doping, we first determine the position of the atomic sites within STM images, establishing that the maximum electronic density of states at the $K$-point lies between the atoms. In contrast, the maximum density of states at the $Γ$ point is at the atomic sites. This signifies that WSe$_2$ is a topologically obstructed atomic insulator, which cannot be adiabatically transformed to the trivial atomic insulator limit.
format Preprint
id arxiv_https___arxiv_org_abs_2412_02813
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Real-Space Imaging of the Band Topology of Transition Metal Dichalcogenides
Holbrook, Madisen
Ingham, Julian
Kaplan, Daniel
Holtzman, Luke
Bierman, Brenna
Olson, Nicholas
Nashabeh, Luca
Liu, Song
Zhu, Xiaoyang
Rhodes, Daniel
Barmak, Katayun
Hone, James
Queiroz, Raquel
Pasupathy, Abhay
Materials Science
Mesoscale and Nanoscale Physics
The topological properties of Bloch bands are intimately tied to the structure of their electronic wavefunctions within the unit cell of a crystal. Here, we show that scanning tunneling microscopy (STM) measurements on the prototypical transition metal dichalcogenide (TMD) semiconductor WSe$_2$ can be used to unambiguously fix the location of the Wannier center of the valence band. Using site-specific substitutional doping, we first determine the position of the atomic sites within STM images, establishing that the maximum electronic density of states at the $K$-point lies between the atoms. In contrast, the maximum density of states at the $Γ$ point is at the atomic sites. This signifies that WSe$_2$ is a topologically obstructed atomic insulator, which cannot be adiabatically transformed to the trivial atomic insulator limit.
title Real-Space Imaging of the Band Topology of Transition Metal Dichalcogenides
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2412.02813