Diamond-defect engineering of NV- centers using ion beam irradiation
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arXiv
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866909415651672064 |
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| author | Toural, J. L. Sánchez García-Pérez, J. Bernardo-Gavito, R. Granados, D. Andrino-Gómez, A. García, G. Pau, J. L. Ramos, M. A. Gordillo, N. |
| author_facet | Toural, J. L. Sánchez García-Pérez, J. Bernardo-Gavito, R. Granados, D. Andrino-Gómez, A. García, G. Pau, J. L. Ramos, M. A. Gordillo, N. |
| contents | The interplay between ion beam modification techniques in the MeV range and the controlled generation of negatively charged nitrogen-vacancy (NV-) centers in nitrogen-doped synthetic diamond crystals is explored. An experimental approach employing both light (H+) and heavy (Br+6) ions was followed to assess their respective impacts on the creation of NV- centers, using different ion energies or fluences to generate varying amounts of vacancies. Photoluminescence spectroscopy was applied to characterize NV- and neutral NV0 centers. Initially, no NV centers were detected post-irradiation, despite the presence of substitutional nitrogen and vacancies. However, after annealing at 800C (and in some cases at 900C), most samples exhibited a high density of NV0 and especially NV- centers. This demonstrates that thermal treatment is essential for vacancy-nitrogen recombination and NV- formation, often through electron capture from nearby nitrogen atoms. Notably, we achieved high NV- densities without graphitization, which is essential for preserving the material's properties for quantum applications. This study underscores and quantifies the effectiveness of MeV-range ions in controlling vacancy distributions and highlights their potential for optimizing NV- center formation to enhance the sensitivity of diamond-based quantum magnetic sensors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_03386 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Diamond-defect engineering of NV- centers using ion beam irradiation Toural, J. L. Sánchez García-Pérez, J. Bernardo-Gavito, R. Granados, D. Andrino-Gómez, A. García, G. Pau, J. L. Ramos, M. A. Gordillo, N. Materials Science Accelerator Physics Applied Physics The interplay between ion beam modification techniques in the MeV range and the controlled generation of negatively charged nitrogen-vacancy (NV-) centers in nitrogen-doped synthetic diamond crystals is explored. An experimental approach employing both light (H+) and heavy (Br+6) ions was followed to assess their respective impacts on the creation of NV- centers, using different ion energies or fluences to generate varying amounts of vacancies. Photoluminescence spectroscopy was applied to characterize NV- and neutral NV0 centers. Initially, no NV centers were detected post-irradiation, despite the presence of substitutional nitrogen and vacancies. However, after annealing at 800C (and in some cases at 900C), most samples exhibited a high density of NV0 and especially NV- centers. This demonstrates that thermal treatment is essential for vacancy-nitrogen recombination and NV- formation, often through electron capture from nearby nitrogen atoms. Notably, we achieved high NV- densities without graphitization, which is essential for preserving the material's properties for quantum applications. This study underscores and quantifies the effectiveness of MeV-range ions in controlling vacancy distributions and highlights their potential for optimizing NV- center formation to enhance the sensitivity of diamond-based quantum magnetic sensors. |
| title | Diamond-defect engineering of NV- centers using ion beam irradiation |
| topic | Materials Science Accelerator Physics Applied Physics |
| url | https://arxiv.org/abs/2412.03386 |