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Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas

Fuente: arXiv

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Bibliographic Details
Main Authors:	Dill, Joseph E., Chang, Chuan F. C., Jena, Debdeep, Xing, Huili Grace
Format:	Preprint
Published:	2024
Subjects:	Applied Physics
Online Access:	Acceder al recurso
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