Saved in:
| Main Authors: | , , , , , , , , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2412.03830 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866912145052008448 |
|---|---|
| author | Fan, Yiyan Zhang, Qinghua Lin, Ting Bai, He Huo, Chuanrui Jin, Qiao Deng, Tielong Choi, Songhee Chen, Shengru Hong, Haitao Cui, Ting Wang, Qianying Rong, Dongke Liu, Chen Ge, Chen Zhu, Tao Gu, Lin Jin, Kuijuan Chen, Jun Guo, Er-Jia |
| author_facet | Fan, Yiyan Zhang, Qinghua Lin, Ting Bai, He Huo, Chuanrui Jin, Qiao Deng, Tielong Choi, Songhee Chen, Shengru Hong, Haitao Cui, Ting Wang, Qianying Rong, Dongke Liu, Chen Ge, Chen Zhu, Tao Gu, Lin Jin, Kuijuan Chen, Jun Guo, Er-Jia |
| contents | Creating a heterostructure by combining two magnetically and structurally distinct ruthenium oxides is a crucial approach for investigating their emergent magnetic states and interactions. Previously, research has predominantly concentrated on the intrinsic properties of the ferromagnet SrRuO3 and recently discovered altermagnet RuO2 solely. Here, we engineered an ultrasharp sublattice-matched heterointerface using pseudo-cubic SrRuO3 and rutile RuO2, conducting an in-depth analysis of their spin interactions. Structurally, to accommodate the lattice symmetry mismatch, the inverted RuO2 layer undergoes an in-plane rotation of 18 degrees during epitaxial growth on SrRuO3 layer, resulting in an interesting and rotational interface with perfect crystallinity and negligible chemical intermixing. Performance-wise, the interfacial layer of 6 nm in RuO2 adjacent to SrRuO3 exhibits a nonzero magnetic moment, contributing to an enhanced anomalous Hall effect (AHE) at low temperatures. Furthermore, our observations indicate that, in contrast to SrRuO3 single layers, the AHE of [(RuO2)15/(SrRuO3)n] heterostructures shows nonlinear behavior and reaches its maximum when the SrRuO3 thickness reaches tens of nm. These results suggest that the interfacial magnetic interaction surpasses that of all-perovskite oxides (~5-unit cells). This study underscores the significance and potential applications of magnetic interactions based on the crystallographic asymmetric interfaces in the design of spintronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_03830 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Confined Magnetization at the Sublattice-Matched Ruthenium Oxide Heterointerface Fan, Yiyan Zhang, Qinghua Lin, Ting Bai, He Huo, Chuanrui Jin, Qiao Deng, Tielong Choi, Songhee Chen, Shengru Hong, Haitao Cui, Ting Wang, Qianying Rong, Dongke Liu, Chen Ge, Chen Zhu, Tao Gu, Lin Jin, Kuijuan Chen, Jun Guo, Er-Jia Materials Science Strongly Correlated Electrons Creating a heterostructure by combining two magnetically and structurally distinct ruthenium oxides is a crucial approach for investigating their emergent magnetic states and interactions. Previously, research has predominantly concentrated on the intrinsic properties of the ferromagnet SrRuO3 and recently discovered altermagnet RuO2 solely. Here, we engineered an ultrasharp sublattice-matched heterointerface using pseudo-cubic SrRuO3 and rutile RuO2, conducting an in-depth analysis of their spin interactions. Structurally, to accommodate the lattice symmetry mismatch, the inverted RuO2 layer undergoes an in-plane rotation of 18 degrees during epitaxial growth on SrRuO3 layer, resulting in an interesting and rotational interface with perfect crystallinity and negligible chemical intermixing. Performance-wise, the interfacial layer of 6 nm in RuO2 adjacent to SrRuO3 exhibits a nonzero magnetic moment, contributing to an enhanced anomalous Hall effect (AHE) at low temperatures. Furthermore, our observations indicate that, in contrast to SrRuO3 single layers, the AHE of [(RuO2)15/(SrRuO3)n] heterostructures shows nonlinear behavior and reaches its maximum when the SrRuO3 thickness reaches tens of nm. These results suggest that the interfacial magnetic interaction surpasses that of all-perovskite oxides (~5-unit cells). This study underscores the significance and potential applications of magnetic interactions based on the crystallographic asymmetric interfaces in the design of spintronic devices. |
| title | Confined Magnetization at the Sublattice-Matched Ruthenium Oxide Heterointerface |
| topic | Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2412.03830 |