Guardado en:
Detalles Bibliográficos
Autores principales: Peng, Bingquan, Li, Yinshuo, Chen, Liang
Formato: Preprint
Publicado: 2024
Materias:
Acceso en línea:https://arxiv.org/abs/2412.04035
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
_version_ 1866909417340928000
author Peng, Bingquan
Li, Yinshuo
Chen, Liang
author_facet Peng, Bingquan
Li, Yinshuo
Chen, Liang
contents Bismuth telluride-based materials is the only commercially viable room-temperature thermoelectric material, despite its limited tellurium and poor mechanical properties. The search for materials with a high figure of merit (zT > 1.00) near room temperature remains a major challenge. In this work, we systematically investigate the structural stability and the thermoelectric capabilities of monolayer \b{eta}-CuI and γ-CuI through the density functional theory (DFT) combined with Boltzmann transport theory. Based on the thermoelectric transport coefficients of monolayer \b{eta}-CuI and γ-CuI, we predict their zT values will vary with carrier concentration and increase with temperature. Comparing the zT values, monolayer \b{eta}-CuI demonstrates superior thermoelectric properties compared to γ-CuI. At room temperature, the optimal zT values of monolayer \b{eta}-CuI exceed 1.50, with particularly high values of 2.98 (p-type) and 4.10 (n-type) along the Zigzag direction, demonstrating significant anisotropy. These results suggest the great potential of the monolayer \b{eta}-CuI is promising candidate materials for low temperature thermoelectric applications.
format Preprint
id arxiv_https___arxiv_org_abs_2412_04035
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Two-dimensional \b{eta}-phase copper iodide: a promising candidate for low-temperature thermoelectric applications
Peng, Bingquan
Li, Yinshuo
Chen, Liang
Materials Science
Computational Physics
Bismuth telluride-based materials is the only commercially viable room-temperature thermoelectric material, despite its limited tellurium and poor mechanical properties. The search for materials with a high figure of merit (zT > 1.00) near room temperature remains a major challenge. In this work, we systematically investigate the structural stability and the thermoelectric capabilities of monolayer \b{eta}-CuI and γ-CuI through the density functional theory (DFT) combined with Boltzmann transport theory. Based on the thermoelectric transport coefficients of monolayer \b{eta}-CuI and γ-CuI, we predict their zT values will vary with carrier concentration and increase with temperature. Comparing the zT values, monolayer \b{eta}-CuI demonstrates superior thermoelectric properties compared to γ-CuI. At room temperature, the optimal zT values of monolayer \b{eta}-CuI exceed 1.50, with particularly high values of 2.98 (p-type) and 4.10 (n-type) along the Zigzag direction, demonstrating significant anisotropy. These results suggest the great potential of the monolayer \b{eta}-CuI is promising candidate materials for low temperature thermoelectric applications.
title Two-dimensional \b{eta}-phase copper iodide: a promising candidate for low-temperature thermoelectric applications
topic Materials Science
Computational Physics
url https://arxiv.org/abs/2412.04035