APA-Zitierstil (7. Ausg.)

Niu, C., Long, L., Zhang, Y., Lin, Z., Tan, P., Lin, J., . . . Ye, P. D. (2024). Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium.

Chicago-Zitierstil (17. Ausg.)

Niu, Chang, Linjia Long, Yizhi Zhang, Zehao Lin, Pukun Tan, Jian-Yu Lin, Wenzhuo Wu, Haiyan Wang, und Peide D. Ye. Ultralow Voltage Operation of P- and N-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium. 2024.

MLA-Zitierstil (9. Ausg.)

Niu, Chang, et al. Ultralow Voltage Operation of P- and N-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium. 2024.