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Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium

Fuente: arXiv

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Bibliographic Details
Main Authors:	Niu, Chang, Long, Linjia, Zhang, Yizhi, Lin, Zehao, Tan, Pukun, Lin, Jian-Yu, Wu, Wenzhuo, Wang, Haiyan, Ye, Peide D.
Format:	Preprint
Published:	2024
Subjects:	Applied Physics Mesoscale and Nanoscale Physics Materials Science
Online Access:	Acceder al recurso
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