Spin and Orbital Rashba effects at the Ni/HfO$_2$ interface
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arXiv
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| Format: | Preprint |
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2024
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| _version_ | 1866916510805524480 |
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| author | Pezo, Armando Saul, Andrés Manchon, Aurélien Arras, Rémi |
| author_facet | Pezo, Armando Saul, Andrés Manchon, Aurélien Arras, Rémi |
| contents | We predict the giant ferroelectric control of interfacial properties of Ni/HfO2, namely, (i) the magnetocrystalline anisotropy and (ii) the inverse spin and orbital Rashba effects. The reversible control of magnetic properties using electric gating is a promising route to low-energy consumption magnetic devices, including memories and logic gates. Synthetic multiferroics, composed of a ferroelectric in proximity to a magnet, stand out as a promising platform for such devices. Using a combination of $ab$ $initio$ simulations and transport calculations, we demonstrate that reversing the electric polarization modulates the interface magnetocrystalline anisotropy from in-plane to out-of-plane. This modulation compares favorably with recent reports obtained upon electromigration induced by ionic gating. In addition, we find that the current-driven spin and orbital densities at the interface can be modulated by about 50% and 30%, respectively. This giant modulation of the spin-charge and orbit-charge conversion efficiencies opens appealing avenues for voltage-controlled spin- and orbitronics devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_04927 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Spin and Orbital Rashba effects at the Ni/HfO$_2$ interface Pezo, Armando Saul, Andrés Manchon, Aurélien Arras, Rémi Materials Science We predict the giant ferroelectric control of interfacial properties of Ni/HfO2, namely, (i) the magnetocrystalline anisotropy and (ii) the inverse spin and orbital Rashba effects. The reversible control of magnetic properties using electric gating is a promising route to low-energy consumption magnetic devices, including memories and logic gates. Synthetic multiferroics, composed of a ferroelectric in proximity to a magnet, stand out as a promising platform for such devices. Using a combination of $ab$ $initio$ simulations and transport calculations, we demonstrate that reversing the electric polarization modulates the interface magnetocrystalline anisotropy from in-plane to out-of-plane. This modulation compares favorably with recent reports obtained upon electromigration induced by ionic gating. In addition, we find that the current-driven spin and orbital densities at the interface can be modulated by about 50% and 30%, respectively. This giant modulation of the spin-charge and orbit-charge conversion efficiencies opens appealing avenues for voltage-controlled spin- and orbitronics devices. |
| title | Spin and Orbital Rashba effects at the Ni/HfO$_2$ interface |
| topic | Materials Science |
| url | https://arxiv.org/abs/2412.04927 |