Angstrom Scale Ionic Memristors' Engineering with van der Waals Materials- A Route to Highly Tunable Memory States
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866912147207880704 |
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| author | Biswabhusan, Dhal Animesh, Puzari Yeh, Li-Hsien Gopinadhan, Kalon |
| author_facet | Biswabhusan, Dhal Animesh, Puzari Yeh, Li-Hsien Gopinadhan, Kalon |
| contents | Memristors that mimic brain functions are crucial for energy-efficient neuromorphic devices. Ion channels that emulate biological synapses are still in the early stages of development, especially the tunability of memory states. Here, we demonstrate that cations such as K+, Na+, Ca2+, and Al3+ intercalated in the interlayer spaces of vermiculite, result in highly confined channels of size 3-5 Å. They host exotic memristor properties through ion exchange dynamics, even at high salt concentrations of 1 M. The bipolar memristor characteristics observed are tunable with frequency, geometric asymmetry, ion concentration, and intercalants. Notably, we observe polarization-flipping memristor behavior in two cases: one with Al3+ ions and another with devices having a geometric asymmetry ratio greater than 15. This inversion is attributed to the over-screening of counter-ions due to their accumulation at the channel entrance. Our results suggest that ion exchange dynamics, ion-ion interactions, and ion accumulation/depletion mechanisms, particularly with multivalent ions, can be harnessed to develop advanced memristor devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_05051 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Angstrom Scale Ionic Memristors' Engineering with van der Waals Materials- A Route to Highly Tunable Memory States Biswabhusan, Dhal Animesh, Puzari Yeh, Li-Hsien Gopinadhan, Kalon Materials Science Mesoscale and Nanoscale Physics Memristors that mimic brain functions are crucial for energy-efficient neuromorphic devices. Ion channels that emulate biological synapses are still in the early stages of development, especially the tunability of memory states. Here, we demonstrate that cations such as K+, Na+, Ca2+, and Al3+ intercalated in the interlayer spaces of vermiculite, result in highly confined channels of size 3-5 Å. They host exotic memristor properties through ion exchange dynamics, even at high salt concentrations of 1 M. The bipolar memristor characteristics observed are tunable with frequency, geometric asymmetry, ion concentration, and intercalants. Notably, we observe polarization-flipping memristor behavior in two cases: one with Al3+ ions and another with devices having a geometric asymmetry ratio greater than 15. This inversion is attributed to the over-screening of counter-ions due to their accumulation at the channel entrance. Our results suggest that ion exchange dynamics, ion-ion interactions, and ion accumulation/depletion mechanisms, particularly with multivalent ions, can be harnessed to develop advanced memristor devices. |
| title | Angstrom Scale Ionic Memristors' Engineering with van der Waals Materials- A Route to Highly Tunable Memory States |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2412.05051 |