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Stochastic resonance in a metal-oxide memristive device

Fuente: arXiv

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Bibliographic Details
Main Authors:	Mikhaylov, A. N., Guseinov, D. V., Belov, A. I., Korolev, D. S., Shishmakova, V. A., Koryazhkina, M. N., Filatov, D. O., Gorshkov, O. N., Maldonado, D., Alonso, F. J., Roldan, J. B., Krichigin, A. V., Agudov, N. V., Dubkov, A. A., Carollo, A., Spagnolo, B.
Format:	Preprint
Published:	2024
Subjects:	Mesoscale and Nanoscale Physics
Online Access:	Acceder al recurso
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_version_	1866916512526237696
author	Mikhaylov, A. N. Guseinov, D. V. Belov, A. I. Korolev, D. S. Shishmakova, V. A. Koryazhkina, M. N. Filatov, D. O. Gorshkov, O. N. Maldonado, D. Alonso, F. J. Roldan, J. B. Krichigin, A. V. Agudov, N. V. Dubkov, A. A. Carollo, A. Spagnolo, B.
author_facet	Mikhaylov, A. N. Guseinov, D. V. Belov, A. I. Korolev, D. S. Shishmakova, V. A. Koryazhkina, M. N. Filatov, D. O. Gorshkov, O. N. Maldonado, D. Alonso, F. J. Roldan, J. B. Krichigin, A. V. Agudov, N. V. Dubkov, A. A. Carollo, A. Spagnolo, B.
contents	The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of-art metal-oxide memristive device based on yttria-stabilized zirconium dioxide and tantalum pentoxide, which exhibits bipolar filamentary resistive switching of anionic type. The effect of white Gaussian noise superimposed on the sub-threshold sinusoidal driving signal is analyzed through the time series statistics of the resistive switching parameters, the spectral response to a periodic perturbation and the signal-to-noise ratio at the output of the nonlinear system. The stabilized resistive switching and the increased memristance response are revealed in the observed regularities at an optimal noise intensity corresponding to the stochastic resonance phenomenon and interpreted using a stochastic memristor model taking into account an external noise source added to the control voltage. The obtained results clearly show that noise and fluctuations can play a constructive role in nonlinear memristive systems far from equilibrium.
format	Preprint
id	arxiv_https___arxiv_org_abs_2412_05307
institution	arXiv
publishDate	2024
record_format	arxiv
spellingShingle	Stochastic resonance in a metal-oxide memristive device Mikhaylov, A. N. Guseinov, D. V. Belov, A. I. Korolev, D. S. Shishmakova, V. A. Koryazhkina, M. N. Filatov, D. O. Gorshkov, O. N. Maldonado, D. Alonso, F. J. Roldan, J. B. Krichigin, A. V. Agudov, N. V. Dubkov, A. A. Carollo, A. Spagnolo, B. Mesoscale and Nanoscale Physics The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of-art metal-oxide memristive device based on yttria-stabilized zirconium dioxide and tantalum pentoxide, which exhibits bipolar filamentary resistive switching of anionic type. The effect of white Gaussian noise superimposed on the sub-threshold sinusoidal driving signal is analyzed through the time series statistics of the resistive switching parameters, the spectral response to a periodic perturbation and the signal-to-noise ratio at the output of the nonlinear system. The stabilized resistive switching and the increased memristance response are revealed in the observed regularities at an optimal noise intensity corresponding to the stochastic resonance phenomenon and interpreted using a stochastic memristor model taking into account an external noise source added to the control voltage. The obtained results clearly show that noise and fluctuations can play a constructive role in nonlinear memristive systems far from equilibrium.
title	Stochastic resonance in a metal-oxide memristive device
topic	Mesoscale and Nanoscale Physics
url	https://arxiv.org/abs/2412.05307