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| Autori principali: | , , , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2412.05959 |
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| _version_ | 1866915053576388608 |
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| author | Song, Dezhi Huang, Fuyang Yao, Gang Zhang, Haimin Huang, Haiming Yan, Hang Zhang, Jun Zhang, Qinghua Gu, Lin Ma, Xu-Cun Jia, Jin-Feng Xue, Qi-Kun Jiang, Ye-Ping |
| author_facet | Song, Dezhi Huang, Fuyang Yao, Gang Zhang, Haimin Huang, Haiming Yan, Hang Zhang, Jun Zhang, Qinghua Gu, Lin Ma, Xu-Cun Jia, Jin-Feng Xue, Qi-Kun Jiang, Ye-Ping |
| contents | MnBi2Te4 (MBT) is a typical magnetic topological insulator with an A-type antiferromagnetic (AFM) ground state. Here we prepared ultra-thin MBT films with controlled anti-site defects and observed rich doping-dependent magnetic behaviors. We find in one-septuple-layer MBT films a ferrimagnetic ground state and in two-septuple-layer ones a kind of re-entrant ferromagnetism (FM) that disappears with increased Bi-on-Mn doping in the FM Mn-layers. This re-entrant behavior is attributed to a kind of symmetric exchange-bias effect that arises in the presence of both AFM and FM sub-systems due to the introduction of high-dense Mn-on-Bi anti-site defects. Furthermore, all MBT films display spin-glass-like behaviors. Our work demonstrates rich magnetic behaviors originating from the competing magnetic interactions between Mn spins at different lattice positions in MBT. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_05959 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | The re-entrant ferromagnetism due to symmetric exchange bias in two septuple-layer MnBi2Te4 epitaxial films Song, Dezhi Huang, Fuyang Yao, Gang Zhang, Haimin Huang, Haiming Yan, Hang Zhang, Jun Zhang, Qinghua Gu, Lin Ma, Xu-Cun Jia, Jin-Feng Xue, Qi-Kun Jiang, Ye-Ping Materials Science MnBi2Te4 (MBT) is a typical magnetic topological insulator with an A-type antiferromagnetic (AFM) ground state. Here we prepared ultra-thin MBT films with controlled anti-site defects and observed rich doping-dependent magnetic behaviors. We find in one-septuple-layer MBT films a ferrimagnetic ground state and in two-septuple-layer ones a kind of re-entrant ferromagnetism (FM) that disappears with increased Bi-on-Mn doping in the FM Mn-layers. This re-entrant behavior is attributed to a kind of symmetric exchange-bias effect that arises in the presence of both AFM and FM sub-systems due to the introduction of high-dense Mn-on-Bi anti-site defects. Furthermore, all MBT films display spin-glass-like behaviors. Our work demonstrates rich magnetic behaviors originating from the competing magnetic interactions between Mn spins at different lattice positions in MBT. |
| title | The re-entrant ferromagnetism due to symmetric exchange bias in two septuple-layer MnBi2Te4 epitaxial films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2412.05959 |