Resistance switch in ferromagnet/spin glass/ferromagnet spin valves

Fuente: arXiv
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Main Authors: Song, Dezhi, Huang, Fuyang, Yao, Gang, Zhang, Haimin, Huang, Haiming, Zhang, Jun, Ma, Xu-Cun, Jia, Jin-Feng, Xue, Qi-Kun, Jiang, Ye-Ping
Format: Preprint
Published: 2024
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author Song, Dezhi
Huang, Fuyang
Yao, Gang
Zhang, Haimin
Huang, Haiming
Zhang, Jun
Ma, Xu-Cun
Jia, Jin-Feng
Xue, Qi-Kun
Jiang, Ye-Ping
author_facet Song, Dezhi
Huang, Fuyang
Yao, Gang
Zhang, Haimin
Huang, Haiming
Zhang, Jun
Ma, Xu-Cun
Jia, Jin-Feng
Xue, Qi-Kun
Jiang, Ye-Ping
contents We obtain in single van-der-Waals layer of MnBi2Te4 the spin-valve-like ferromagnet/spin glass (SG)/ferromagnet architecture, where the switch of individual spin states in the SG-like layer appears as the resistance switch behavior. The characteristic temperature of SG can be effectively tuned by fine-control of Bi-doping in the SG layer. A doping- and temperature-dependent phase diagram is established. We demonstrate the remote manipulation and detection of the states of individual Mn-layer spins by tunneling electrons in favor of the electron-phonon, spin-phonon, spin-transfer torque and spin-flip interactions among hot electrons, lattice and local spins, where the spin valve layer is even buried below two-quintuple-layer Bi2Te3. The integration of the SG state into spin valves opens the opportunity of realizing atomic-scale spintronics by integrating different degrees of freedom in two dimensional materials.
format Preprint
id arxiv_https___arxiv_org_abs_2412_05960
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Resistance switch in ferromagnet/spin glass/ferromagnet spin valves
Song, Dezhi
Huang, Fuyang
Yao, Gang
Zhang, Haimin
Huang, Haiming
Zhang, Jun
Ma, Xu-Cun
Jia, Jin-Feng
Xue, Qi-Kun
Jiang, Ye-Ping
Materials Science
Mesoscale and Nanoscale Physics
We obtain in single van-der-Waals layer of MnBi2Te4 the spin-valve-like ferromagnet/spin glass (SG)/ferromagnet architecture, where the switch of individual spin states in the SG-like layer appears as the resistance switch behavior. The characteristic temperature of SG can be effectively tuned by fine-control of Bi-doping in the SG layer. A doping- and temperature-dependent phase diagram is established. We demonstrate the remote manipulation and detection of the states of individual Mn-layer spins by tunneling electrons in favor of the electron-phonon, spin-phonon, spin-transfer torque and spin-flip interactions among hot electrons, lattice and local spins, where the spin valve layer is even buried below two-quintuple-layer Bi2Te3. The integration of the SG state into spin valves opens the opportunity of realizing atomic-scale spintronics by integrating different degrees of freedom in two dimensional materials.
title Resistance switch in ferromagnet/spin glass/ferromagnet spin valves
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2412.05960