Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to- Spin Conversion
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866912231162118144 |
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| author | Chen, Siwei Tang, Zitao Fang, Mengqi Sun, Rui Zhang, Xiaotong Xiao, Licheng Mohajerani, Seyed Sepehr Liu, Na Zhang, Yuze Sarkar, Abdus Salam Sun, Dali Strauf, Stefan Yang, Eui- Hyeok |
| author_facet | Chen, Siwei Tang, Zitao Fang, Mengqi Sun, Rui Zhang, Xiaotong Xiao, Licheng Mohajerani, Seyed Sepehr Liu, Na Zhang, Yuze Sarkar, Abdus Salam Sun, Dali Strauf, Stefan Yang, Eui- Hyeok |
| contents | The integration of two-dimensional (2D) van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next-generation spintronic memory devices. However, achieving high-efficiency SOT switching of monolayer vdW magnets at room temperature poses a significant challenge, particularly without an external magnetic field. Here, we show field-free, deterministic, and nonvolatile SOT switching of perpendicular magnetization in the monolayer, diluted magnetic semiconductor (DMS), Fe-doped MoS2(Fe:MoS2) at up to 380 K with a current density of $7\times10^4 A cm^{-2}$. The in situ doping of Fe into monolayer MoS2 via chemical vapor deposition and the geometry-induced strain in the crystal break the rotational switching symmetry in Fe:MoS2, promoting field-free SOT switching by generating out-of-plane spins via spin-to-spin conversion. An apparent anomalous Hall effect (AHE) loop shift at a zero in-plane magnetic field verifies the existence of z spins in Fe:MoS2, inducing an antidamping-like torque that facilitates field-free SOT switching. A strong topological Hall effect (THE) was also observed, attributed to the interfacial Dzyaloshinskii-Moriya interaction (DMI), reducing the energy barrier for SOT switching. This field-free SOT application using a 2D ferromagnetic monolayer provides a new pathway for developing highly power-efficient spintronic memory devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_06650 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to- Spin Conversion Chen, Siwei Tang, Zitao Fang, Mengqi Sun, Rui Zhang, Xiaotong Xiao, Licheng Mohajerani, Seyed Sepehr Liu, Na Zhang, Yuze Sarkar, Abdus Salam Sun, Dali Strauf, Stefan Yang, Eui- Hyeok Mesoscale and Nanoscale Physics Materials Science The integration of two-dimensional (2D) van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next-generation spintronic memory devices. However, achieving high-efficiency SOT switching of monolayer vdW magnets at room temperature poses a significant challenge, particularly without an external magnetic field. Here, we show field-free, deterministic, and nonvolatile SOT switching of perpendicular magnetization in the monolayer, diluted magnetic semiconductor (DMS), Fe-doped MoS2(Fe:MoS2) at up to 380 K with a current density of $7\times10^4 A cm^{-2}$. The in situ doping of Fe into monolayer MoS2 via chemical vapor deposition and the geometry-induced strain in the crystal break the rotational switching symmetry in Fe:MoS2, promoting field-free SOT switching by generating out-of-plane spins via spin-to-spin conversion. An apparent anomalous Hall effect (AHE) loop shift at a zero in-plane magnetic field verifies the existence of z spins in Fe:MoS2, inducing an antidamping-like torque that facilitates field-free SOT switching. A strong topological Hall effect (THE) was also observed, attributed to the interfacial Dzyaloshinskii-Moriya interaction (DMI), reducing the energy barrier for SOT switching. This field-free SOT application using a 2D ferromagnetic monolayer provides a new pathway for developing highly power-efficient spintronic memory devices. |
| title | Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to- Spin Conversion |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2412.06650 |