Test Beam Characterization of a Digital Silicon Photomultiplier

Fuente: arXiv
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Autori principali: King, Finn, Diehl, Inge, Feyens, Ono, Gregor, Ingrid-Maria, Hansen, Karsten, Lachnit, Stephan, Poblotzki, Frauke, Rastorguev, Daniil, Spannagel, Simon, Vanat, Tomas, Vignola, Gianpiero
Natura: Preprint
Pubblicazione: 2024
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author King, Finn
Diehl, Inge
Feyens, Ono
Gregor, Ingrid-Maria
Hansen, Karsten
Lachnit, Stephan
Poblotzki, Frauke
Rastorguev, Daniil
Spannagel, Simon
Vanat, Tomas
Vignola, Gianpiero
author_facet King, Finn
Diehl, Inge
Feyens, Ono
Gregor, Ingrid-Maria
Hansen, Karsten
Lachnit, Stephan
Poblotzki, Frauke
Rastorguev, Daniil
Spannagel, Simon
Vanat, Tomas
Vignola, Gianpiero
contents Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and commercial applications. The possibility to produce single photon avalanche diodes (SPADs) in commercial CMOS processes creates the opportunity to combine a matrix of SPADs and an application-specific integrated circuit in the same die. The potential of such digital SiPMs (dSiPMs) is still being explored, while it already is an established technology in certain applications, like light detection and ranging (LiDAR). A prototype dSiPM, produced in the LFoundry 150-nm CMOS technology, was designed and tested at DESY. The dSiPM central part is a matrix of 32 by 32 pixels. Each pixel contains four SPADs, a digital front-end, and has an area of 69.6 $\times$ 76 um$^2$. The chip has four time-to-digital converters and includes further circuitry for data serialization and data links. This work focuses on the characterization of the prototype in an electron beam at the DESY II Test Beam facility, to study its capability as a tracking and timing detector for minimum ionizing particles (MIPs). The MIP detection efficiency is found to be dominated by the fill factor and on the order of 31 %. The position of the impinging MIPs can be measured with a precision of about 20 um, and the time of the interaction can be measured with a precision better than 50 ps for about 85 % of the detected events. In addition, laboratory studies on the breakdown voltage, dark count rate, and crosstalk probability, as well as the experimental methods required for the characterization of such a sensor type in a particle beam are presented.
format Preprint
id arxiv_https___arxiv_org_abs_2412_06687
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Test Beam Characterization of a Digital Silicon Photomultiplier
King, Finn
Diehl, Inge
Feyens, Ono
Gregor, Ingrid-Maria
Hansen, Karsten
Lachnit, Stephan
Poblotzki, Frauke
Rastorguev, Daniil
Spannagel, Simon
Vanat, Tomas
Vignola, Gianpiero
Instrumentation and Detectors
Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and commercial applications. The possibility to produce single photon avalanche diodes (SPADs) in commercial CMOS processes creates the opportunity to combine a matrix of SPADs and an application-specific integrated circuit in the same die. The potential of such digital SiPMs (dSiPMs) is still being explored, while it already is an established technology in certain applications, like light detection and ranging (LiDAR). A prototype dSiPM, produced in the LFoundry 150-nm CMOS technology, was designed and tested at DESY. The dSiPM central part is a matrix of 32 by 32 pixels. Each pixel contains four SPADs, a digital front-end, and has an area of 69.6 $\times$ 76 um$^2$. The chip has four time-to-digital converters and includes further circuitry for data serialization and data links. This work focuses on the characterization of the prototype in an electron beam at the DESY II Test Beam facility, to study its capability as a tracking and timing detector for minimum ionizing particles (MIPs). The MIP detection efficiency is found to be dominated by the fill factor and on the order of 31 %. The position of the impinging MIPs can be measured with a precision of about 20 um, and the time of the interaction can be measured with a precision better than 50 ps for about 85 % of the detected events. In addition, laboratory studies on the breakdown voltage, dark count rate, and crosstalk probability, as well as the experimental methods required for the characterization of such a sensor type in a particle beam are presented.
title Test Beam Characterization of a Digital Silicon Photomultiplier
topic Instrumentation and Detectors
url https://arxiv.org/abs/2412.06687