Temperature-induced hysteretic behavior of resistivity and magnetoresistance of electrodeposited bismuth films for X- ray transition-edge sensor absorbers

Documenti analoghi

• Controlled Shifts of X-ray Emission Lines Measured with Transition Edge Sensors at the Advanced Photon Source
  di: Guruswamy, Tejas, et al.
  Pubblicazione: (2025)
• Signatures of Thermal and Electrical Crosstalk in a Microwave Multiplexed Hard X-ray Transition Edge Sensor Array
  di: Triamkitsawat, Panthita, et al.
  Pubblicazione: (2023)
• Devices for Thermal Conductivity Measurements of Electroplated Bi for X-ray TES Absorbers
  di: Quaranta, Orlando, et al.
  Pubblicazione: (2021)
• Interfacial properties of MoS2 thin films grown on functional substrates
  di: Rehman, Hafiz Sami Ur, et al.
  Pubblicazione: (2026)
• A high-speed, high-resolution Transition Edge Sensor spectrometer for soft X-rays at the Advanced Photon Source
  di: Quaranta, Orlando, et al.
  Pubblicazione: (2025)