In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI
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arXiv
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| Format: | Preprint |
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2024
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| author | Kruv, A. van Setten, M. J. Chasin, A. Matsubayashi, D. Dekkers, H. F. W. Pavel, A. Wan, Y. Trivedi, K. Rassoul, N. Li, J. Jiang, Y. Subhechha, S. Pourtois, G. Belmonte, A. Kar, G. Sankar |
| author_facet | Kruv, A. van Setten, M. J. Chasin, A. Matsubayashi, D. Dekkers, H. F. W. Pavel, A. Wan, Y. Trivedi, K. Rassoul, N. Li, J. Jiang, Y. Subhechha, S. Pourtois, G. Belmonte, A. Kar, G. Sankar |
| contents | Integrating In-Ga-Zn-oxide (IGZO) channel transistors in silicon-based ecosystems requires the resilience of the channel material to hydrogen treatment. Standard IGZO, containing 40% In (metal ratio) suffers from degradation under forming gas anneal (FGA) and hydrogen (H) driven positive bias temperature instability (PBTI). We demonstrate scaled top-gated ALD transistors with an In-poor (In $\le$ 17%) IGZO channel that show superior resilience to hydrogen compared to the In-rich (In=40%) counterpart. The devices, fabricated with a 300-mm FAB process with dimensions down to $W_\mathrm{CH} \times L_\mathrm{TG} = 80 \times 40 \mathrm{nm}^2$, show excellent stability in 2-hour 420$^\circ$C forming gas anneal ($0.06 \le \left| ΔV_{\mathrm{TH}} \right| \le 0.33\mathrm{V}$) and improved resilience to H in PBTI at 125$^\circ$C (down to no detectable H-induced $V_{\mathrm{TH}}$ shift) compared to In-rich devices. We demonstrate that the device degradation by H in the FGA is different from the H-induced VTH instability in PBTI, namely oxygen scavenging by H and H release from a gate-dielectric into the channel, respectively, and that resilience to H in one process does not automatically translate to resilience to H in the other one. This significant improvement in IGZO resilience to H enables the use of FGA treatments during fabrication needed for silicon technology compatibility, as well as further scaling and 3D integration, bringing IGZO-based technologies closer to mass production. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_07362 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI Kruv, A. van Setten, M. J. Chasin, A. Matsubayashi, D. Dekkers, H. F. W. Pavel, A. Wan, Y. Trivedi, K. Rassoul, N. Li, J. Jiang, Y. Subhechha, S. Pourtois, G. Belmonte, A. Kar, G. Sankar Materials Science Computational Physics Integrating In-Ga-Zn-oxide (IGZO) channel transistors in silicon-based ecosystems requires the resilience of the channel material to hydrogen treatment. Standard IGZO, containing 40% In (metal ratio) suffers from degradation under forming gas anneal (FGA) and hydrogen (H) driven positive bias temperature instability (PBTI). We demonstrate scaled top-gated ALD transistors with an In-poor (In $\le$ 17%) IGZO channel that show superior resilience to hydrogen compared to the In-rich (In=40%) counterpart. The devices, fabricated with a 300-mm FAB process with dimensions down to $W_\mathrm{CH} \times L_\mathrm{TG} = 80 \times 40 \mathrm{nm}^2$, show excellent stability in 2-hour 420$^\circ$C forming gas anneal ($0.06 \le \left| ΔV_{\mathrm{TH}} \right| \le 0.33\mathrm{V}$) and improved resilience to H in PBTI at 125$^\circ$C (down to no detectable H-induced $V_{\mathrm{TH}}$ shift) compared to In-rich devices. We demonstrate that the device degradation by H in the FGA is different from the H-induced VTH instability in PBTI, namely oxygen scavenging by H and H release from a gate-dielectric into the channel, respectively, and that resilience to H in one process does not automatically translate to resilience to H in the other one. This significant improvement in IGZO resilience to H enables the use of FGA treatments during fabrication needed for silicon technology compatibility, as well as further scaling and 3D integration, bringing IGZO-based technologies closer to mass production. |
| title | In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI |
| topic | Materials Science Computational Physics |
| url | https://arxiv.org/abs/2412.07362 |