Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

Fuente: arXiv

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Bibliographic Details
Main Authors:	Fa, Yuan, Piacentini, Agata, Macco, Bart, Kalisch, Holger, Heuken, Michael, Vescan, Andrei, Wang, Zhenxing, Lemme, Max C.
Format:	Preprint
Published:	2024
Subjects:	Materials Science Mesoscale and Nanoscale Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2412.08663