Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications
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arXiv
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| Autores principales: | , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866915272123744256 |
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| author | Fa, Yuan Piacentini, Agata Macco, Bart Kalisch, Holger Heuken, Michael Vescan, Andrei Wang, Zhenxing Lemme, Max C. |
| author_facet | Fa, Yuan Piacentini, Agata Macco, Bart Kalisch, Holger Heuken, Michael Vescan, Andrei Wang, Zhenxing Lemme, Max C. |
| contents | Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS${_2}$)-FETs, have gained significant attention for their potential for ultra-short channels, thereby extending Moore's law. However, MoS${_2}$-FETs are prone to the formation of Schottky barriers at the metal-MoS${_2}$ interface, resulting in high contact resistance (R${_c}$) and, consequently, reduced transistor currents in the ON-state. Our study explores the modification of MoS${_2}$ to induce the formation of conductive 1T-MoS${_2}$ at the metal-MoS${_2}$ interface via reverse sputtering. MoS${_2}$-FETs exposed to optimized reverse sputtering conditions in the contact area show R${_c}$ values reduced to less than 50% of their untreated counterparts. This reduction translates into improvements in other electrical characteristics, such as higher ON-state currents. Since reverse sputtering is a standard semiconductor process that enhances the electrical performance of MoS${_2}$-FETs, it has great potential for broader application scenarios in 2DM-based microelectronic devices and circuits. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_08663 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications Fa, Yuan Piacentini, Agata Macco, Bart Kalisch, Holger Heuken, Michael Vescan, Andrei Wang, Zhenxing Lemme, Max C. Materials Science Mesoscale and Nanoscale Physics Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS${_2}$)-FETs, have gained significant attention for their potential for ultra-short channels, thereby extending Moore's law. However, MoS${_2}$-FETs are prone to the formation of Schottky barriers at the metal-MoS${_2}$ interface, resulting in high contact resistance (R${_c}$) and, consequently, reduced transistor currents in the ON-state. Our study explores the modification of MoS${_2}$ to induce the formation of conductive 1T-MoS${_2}$ at the metal-MoS${_2}$ interface via reverse sputtering. MoS${_2}$-FETs exposed to optimized reverse sputtering conditions in the contact area show R${_c}$ values reduced to less than 50% of their untreated counterparts. This reduction translates into improvements in other electrical characteristics, such as higher ON-state currents. Since reverse sputtering is a standard semiconductor process that enhances the electrical performance of MoS${_2}$-FETs, it has great potential for broader application scenarios in 2DM-based microelectronic devices and circuits. |
| title | Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2412.08663 |