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Main Authors: Yan, Luo, Liu, Junchi, Ding, Yu-Feng, Wu, Jiafang, Wang, Bao-Tian, Zhou, Liujiang
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2412.08899
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author Yan, Luo
Liu, Junchi
Ding, Yu-Feng
Wu, Jiafang
Wang, Bao-Tian
Zhou, Liujiang
author_facet Yan, Luo
Liu, Junchi
Ding, Yu-Feng
Wu, Jiafang
Wang, Bao-Tian
Zhou, Liujiang
contents M\textbf{\textit{O}}enes, as emerging MXenes-like materials, also have wide structural spaces and various chemical and physical properties. Using first-principles and high-throughput calculations, we have built an online library (\url{https://moenes.online}) for M\textbf{\textit{O}}enes family materials from basic summaries, mechanical, phonon and electron aspects, based on their structural diversities from 2 stoichiometric ratios, 11 early-transition metals, 4 typical functional groups and 4 oxygen group elements. Compared to MXenes, the main advantage of M\textbf{\textit{O}}enes at present is that we have discovered 14 direct semiconductors, which greatly increases the number of direct semiconductors and the range of band gap values in the MXenes family. Among them, 1T-Ti$_{2}$\textit{\textbf{O}}F$_{2}$ (\textbf{\textit{O}}=O, S, Se) reveal tunable semiconducting features and strong light-harvesting ability ranging from the ultraviolet to the near-infrared region. Besides, 2H- and 1T-Y$_{2}$TeO$_{2}$ have a long carrier lifetime of 2.38 and 1.24 ns, originating from their spatially distinguished VBM and CBM states and long dephasing times. In addition, 2H-Zr$_{2}$O(O)$_{2}$ shows spin-valley coupling phenomena, and the valley spin splitting is apparent and robust in its conduction band ($\sim$85 meV). Therefore, M\textbf{\textit{O}}enes have a wealth of physical properties, not limited to those reported here, and future studies of these emerging M\textbf{\textit{O}}enes are appealing.
format Preprint
id arxiv_https___arxiv_org_abs_2412_08899
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle M\textbf{\textit{O}}enes family materials with Dirac nodal loop, strong light-harvesting ability, long carrier lifetime and conduction-band valley spin splitting
Yan, Luo
Liu, Junchi
Ding, Yu-Feng
Wu, Jiafang
Wang, Bao-Tian
Zhou, Liujiang
Materials Science
Computational Physics
M\textbf{\textit{O}}enes, as emerging MXenes-like materials, also have wide structural spaces and various chemical and physical properties. Using first-principles and high-throughput calculations, we have built an online library (\url{https://moenes.online}) for M\textbf{\textit{O}}enes family materials from basic summaries, mechanical, phonon and electron aspects, based on their structural diversities from 2 stoichiometric ratios, 11 early-transition metals, 4 typical functional groups and 4 oxygen group elements. Compared to MXenes, the main advantage of M\textbf{\textit{O}}enes at present is that we have discovered 14 direct semiconductors, which greatly increases the number of direct semiconductors and the range of band gap values in the MXenes family. Among them, 1T-Ti$_{2}$\textit{\textbf{O}}F$_{2}$ (\textbf{\textit{O}}=O, S, Se) reveal tunable semiconducting features and strong light-harvesting ability ranging from the ultraviolet to the near-infrared region. Besides, 2H- and 1T-Y$_{2}$TeO$_{2}$ have a long carrier lifetime of 2.38 and 1.24 ns, originating from their spatially distinguished VBM and CBM states and long dephasing times. In addition, 2H-Zr$_{2}$O(O)$_{2}$ shows spin-valley coupling phenomena, and the valley spin splitting is apparent and robust in its conduction band ($\sim$85 meV). Therefore, M\textbf{\textit{O}}enes have a wealth of physical properties, not limited to those reported here, and future studies of these emerging M\textbf{\textit{O}}enes are appealing.
title M\textbf{\textit{O}}enes family materials with Dirac nodal loop, strong light-harvesting ability, long carrier lifetime and conduction-band valley spin splitting
topic Materials Science
Computational Physics
url https://arxiv.org/abs/2412.08899