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Main Authors: Wang, Shuo, Niu, Wei, Fang, Yue-Wen
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2412.09298
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author Wang, Shuo
Niu, Wei
Fang, Yue-Wen
author_facet Wang, Shuo
Niu, Wei
Fang, Yue-Wen
contents Symmetry is a cornerstone of condensed matter physics, fundamentally shaping the behavior of electronic systems and inducing the emergence of novel phenomena. The Hall effect, a key concept in this field, demonstrates how symmetry breaking, particularly of time-reversal symmetry, influences electronic transport properties. Recently, the nonlinear Hall effect has extended this understanding by generating a transverse voltage that modulates at twice the frequency of the driving alternating current without breaking time-reversal symmetry. This effect is closely tied to the symmetry and quantum geometric properties of materials, offering a new approach to probing the Berry curvature and quantum metric. Here, we provide a review of the theoretical insights and experimental advancements in the nonlinear Hall effect, particularly focusing on its realization in two-dimensional materials. We discuss the challenges still ahead, look at potential applications for devices, and explore how these ideas might apply to other nonlinear transport phenomena. By elucidating these aspects, this review aims to advance the understanding of nonlinear transport effects and their broader implications for future technologies.
format Preprint
id arxiv_https___arxiv_org_abs_2412_09298
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Nonlinear Hall Effect in Two-dimensional Materials
Wang, Shuo
Niu, Wei
Fang, Yue-Wen
Mesoscale and Nanoscale Physics
Materials Science
Symmetry is a cornerstone of condensed matter physics, fundamentally shaping the behavior of electronic systems and inducing the emergence of novel phenomena. The Hall effect, a key concept in this field, demonstrates how symmetry breaking, particularly of time-reversal symmetry, influences electronic transport properties. Recently, the nonlinear Hall effect has extended this understanding by generating a transverse voltage that modulates at twice the frequency of the driving alternating current without breaking time-reversal symmetry. This effect is closely tied to the symmetry and quantum geometric properties of materials, offering a new approach to probing the Berry curvature and quantum metric. Here, we provide a review of the theoretical insights and experimental advancements in the nonlinear Hall effect, particularly focusing on its realization in two-dimensional materials. We discuss the challenges still ahead, look at potential applications for devices, and explore how these ideas might apply to other nonlinear transport phenomena. By elucidating these aspects, this review aims to advance the understanding of nonlinear transport effects and their broader implications for future technologies.
title Nonlinear Hall Effect in Two-dimensional Materials
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2412.09298