Low two-level-system noise in hydrogenated amorphous silicon
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arXiv
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866913609846620160 |
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| author | Defrance, Fabien Beyer, Andrew D. Wheeler, Jordan Sayers, Jack Golwala, Sunil R. |
| author_facet | Defrance, Fabien Beyer, Andrew D. Wheeler, Jordan Sayers, Jack Golwala, Sunil R. |
| contents | At sub-Kelvin temperatures, two-level systems (TLS) present in amorphous dielectrics source a permittivity noise, degrading the performance of a wide range of devices using superconductive resonators such as qubits or kinetic inductance detectors. We report here on measurements of TLS noise in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition (PECVD) in superconductive lumped-element resonators using parallel-plate capacitors (PPCs). The TLS noise results presented in this article for two recipes of a-Si:H improve on the best achieved in the literature by a factor >5 for a-Si:H and other amorphous dielectrics and are comparable to those observed for resonators deposited on crystalline dielectrics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_09693 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Low two-level-system noise in hydrogenated amorphous silicon Defrance, Fabien Beyer, Andrew D. Wheeler, Jordan Sayers, Jack Golwala, Sunil R. Instrumentation and Detectors Instrumentation and Methods for Astrophysics At sub-Kelvin temperatures, two-level systems (TLS) present in amorphous dielectrics source a permittivity noise, degrading the performance of a wide range of devices using superconductive resonators such as qubits or kinetic inductance detectors. We report here on measurements of TLS noise in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition (PECVD) in superconductive lumped-element resonators using parallel-plate capacitors (PPCs). The TLS noise results presented in this article for two recipes of a-Si:H improve on the best achieved in the literature by a factor >5 for a-Si:H and other amorphous dielectrics and are comparable to those observed for resonators deposited on crystalline dielectrics. |
| title | Low two-level-system noise in hydrogenated amorphous silicon |
| topic | Instrumentation and Detectors Instrumentation and Methods for Astrophysics |
| url | https://arxiv.org/abs/2412.09693 |