Carrier localization in defected areas of (Cd, Mn)Te quantum well investigated via Optically Detected Magnetic Resonance employed in the microscale
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arXiv
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| Autori principali: | , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866916521757900800 |
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| author | Dydniański, Amadeusz Łopion, Aleksandra Raczyński, Mateusz Kazimierczuk, Tomasz Połczyńska, Karolina Ewa Pacuski, Wojciech Kossacki, Piotr |
| author_facet | Dydniański, Amadeusz Łopion, Aleksandra Raczyński, Mateusz Kazimierczuk, Tomasz Połczyńska, Karolina Ewa Pacuski, Wojciech Kossacki, Piotr |
| contents | In this work, we study the impact of carrier localization on three quantities sensitive to carrier gas density at the micrometer scale: charged exciton (X+) oscillator strength, local free carrier conductivity, and the Knight shift. The last two are observed in a micrometer-scale, spatially resolved optically detected magnetic resonance experiment (ODMR). On the surface of MBE-grown (Cd,Mn)Te quantum well we identify defected areas in the vicinity of dislocations. We find that these areas show a much lower conductivity signal while maintaining the same Knight shift values as the pristine areas of the quantum well. We attribute this behavior to carrier localization in the defected regions. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2412_10075 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Carrier localization in defected areas of (Cd, Mn)Te quantum well investigated via Optically Detected Magnetic Resonance employed in the microscale Dydniański, Amadeusz Łopion, Aleksandra Raczyński, Mateusz Kazimierczuk, Tomasz Połczyńska, Karolina Ewa Pacuski, Wojciech Kossacki, Piotr Mesoscale and Nanoscale Physics Materials Science In this work, we study the impact of carrier localization on three quantities sensitive to carrier gas density at the micrometer scale: charged exciton (X+) oscillator strength, local free carrier conductivity, and the Knight shift. The last two are observed in a micrometer-scale, spatially resolved optically detected magnetic resonance experiment (ODMR). On the surface of MBE-grown (Cd,Mn)Te quantum well we identify defected areas in the vicinity of dislocations. We find that these areas show a much lower conductivity signal while maintaining the same Knight shift values as the pristine areas of the quantum well. We attribute this behavior to carrier localization in the defected regions. |
| title | Carrier localization in defected areas of (Cd, Mn)Te quantum well investigated via Optically Detected Magnetic Resonance employed in the microscale |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2412.10075 |